參數(shù)資料
型號： AUIRF3805STRR
元件分類： JFETs
英文描述： 160 A, 55 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： ROHS COMPLIANT, PLASTIC, D2PAK-3
文件頁數(shù)： 8/15頁
文件大小： 382K
代理商： AUIRF3805STRR
AUIRF3805/S/L
2
www.irf.com
S
D
G
Note
through ,,
are on page 3
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage55
–––
V
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.051
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
2.6
3.3
m
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
75
–––
V
IDSS
Drain-to-Source Leakage Current
–––
20
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
200
Gate-to-Source Reverse Leakage
–––
-200
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge
–––
190
290
Qgs
Gate-to-Source Charge
–––
52
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
72
–––
td(on)
Turn-On Delay Time
–––
150
–––
tr
Rise Time
–––20–––
td(off)
Turn-Off Delay Time
–––93–––
tf
Fall Time
–––87–––
LD
Internal Drain Inductance
Between lead,
6mm (0.25in.)
LS
Internal Source Inductance
from package
and center of die contact
Ciss
Input Capacitance
–––
7960
–––
Coss
Output Capacitance
–––
1260
–––
Crss
Reverse Transfer Capacitance
–––
630
–––
Coss
Output Capacitance
–––
4400
–––
Coss
Output Capacitance
–––
980
–––
Coss eff.
Effective Output Capacitance
–––
1550
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
36
54
ns
Qrr
Reverse Recovery Charge
–––
47
71
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
4.5
7.5
nH
pF
A
–––
210
890
–––
A
nA
nC
ns
VDS = 25V, ID = 75A **
ID = 75A **
VDS = 44V
Conditions
VGS = 10V
f
VGS = 0V
VDS = 25V
= 1.0MHz
VGS = 20V
VGS = -20V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 75A** , VGS = 0V f
TJ = 25°C, IF = 75A** , VDD = 28V
di/dt = 100A/s
f
Conditions
VGS = 0V, ID = 250A
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 75A
f**
VDS = VGS, ID = 250A
VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
VGS = 0V, VDS = 1.0V, = 1.0MHz
VGS = 0V, VDS = 44V, = 1.0MHz
VGS = 0V, VDS = 0V to 44V g
VGS = 10V
f
VDD = 28V
ID = 75A**
RG = 2.6
相關(guān)PDF資料
PDF描述
AUIRF3805S 160 A, 55 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRF3805 160 A, 55 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AUIRF3805STRL 160 A, 55 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRF3805L 160 A, 55 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
AUIRF3808STRL 106 A, 75 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AUIRF3808 功能描述:MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF3808 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 75V 140A TO-2 制造商:International Rectifier 功能描述:N CH MOSFET, AUTOMOTIVE, 75V, 140A, TO-220AB
AUIRF3808S 功能描述:MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF3808S 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 75V 106A TO-2
AUIRF3808STRL 功能描述:MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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