參數(shù)資料
型號: AUIRF3805S
元件分類: JFETs
英文描述: 160 A, 55 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: ROHS COMPLIANT, PLASTIC, D2PAK-3
文件頁數(shù): 14/15頁
文件大?。?/td> 382K
代理商: AUIRF3805S
AUIRF3805/S/L
8
www.irf.com
Fig 15. Typical Avalanche Current Vs.Pulsewidth
Fig 16. Maximum Avalanche Energy
Vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7.
T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3BVIav) = DT/ ZthJC
Iav = 2
DT/ [1.3BVZth]
EAS (AR) = PD (ave)tav
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
1
10
100
1000
10000
A
va
la
nc
he
C
ur
re
nt
(A
)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche
pulsewidth,
tav
assuming
Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
200
400
600
800
E
A
R
,A
va
la
nc
he
E
ne
rg
y
(m
J)
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 75A
相關(guān)PDF資料
PDF描述
AUIRF3805 160 A, 55 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AUIRF3805STRL 160 A, 55 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRF3805L 160 A, 55 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
AUIRF3808STRL 106 A, 75 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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