參數(shù)資料
型號(hào)： AUIRF2804S-7PS-7P
元件分類： JFETs
英文描述： 240 A, 40 V, 0.0016 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, D2PAK-7
文件頁數(shù)： 1/13頁
文件大?。?/td> 286K
代理商： AUIRF2804S-7PS-7P
AUIRF2804S-7P
HEXFET Power MOSFET
02/19/2010
www.irf.com
1
AUTOMOTIVE GRADE
PD - 97459
Description
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest process-
ing techniques to achieve extremely low on-resistance
per silicon area. Additional features of this design are
a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating .
These features combine to make this design an ex-
tremely efficient and reliable device for use in Automo-
tive applications and a wide variety of other applica-
tions.
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
S
D
G
V(BR)DSS
40V
RDS(on) max.
1.6m
ID (Silicon Limited)
320A
ID (Package Limited)
240A
Absolute Maximum Ratings
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
c
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
EAS (tested)
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
c
A
EAR
Repetitive Avalanche Energy
g
mJ
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
0.50
°C/W
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
RθJA
Junction-to-Ambient
–––
62
RθJA
Junction-to-Ambient (PCB Mount, steady state)
i
–––
40
Max.
320
230
1360
240
330
2.2
± 20
630
1050
See Fig.12a,12b,15,16
300
-55 to + 175
GD
S
Gate
Drain
Source
GS
S
D
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
相關(guān)PDF資料
PDF描述
AUIRF2804STRR7P 240 A, 40 V, 0.0016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263CB
AUIRF2804S-7P 240 A, 40 V, 0.0016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263CB
AUIRF2804STRL7P 240 A, 40 V, 0.0016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263CB
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AUIRF2804STRL 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF2804STRL7P 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF2804STRR 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF2804STRR7P 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF2804WL 功能描述:MOSFET 40V 295A 1.8mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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