參數(shù)資料
型號： AUIRF1010ZSTRL
元件分類： JFETs
英文描述： 94 A, 55 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： ROHS COMPLIANT, D2PAK-3
文件頁數(shù)： 8/15頁
文件大?。?/td> 357K
代理商： AUIRF1010ZSTRL
AUIRF1010Z/S/L
2
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.05mH,
RG = 25, IAS = 75A, VGS =10V. Part not
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
from 0 to 80% VDSS .
Notes:
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population, starting
TJ = 25°C, L = 0.05mH, RG = 25
, IAS = 75A, VGS =10V.
This is only applied to TO-220AB pakcage.
This is applied to D2Pak, when mounted on 1" square PCB (FR-
4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max.
Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
V
V(BR)DSS/TJ
Breakdown Voltage Temp. Coefficient
–––
0.049
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
5.8
7.5
m
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
33
–––
S
IDSS
Drain-to-Source Leakage Current
–––
20
A
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
200
nA
Gate-to-Source Reverse Leakage
–––
-200
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Qg
Total Gate Charge
–––
63
95
Qgs
Gate-to-Source Charge
–––
19
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
24
–––
td(on)
Turn-On Delay Time
–––18–––
tr
Rise Time
–––
150
–––
td(off)
Turn-Off Delay Time
–––36–––
ns
tf
Fall Time
–––92–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
2840
–––
Coss
Output Capacitance
–––
420
–––
Crss
Reverse Transfer Capacitance
–––
250
–––
pF
Coss
Output Capacitance
–––
1630
–––
Coss
Output Capacitance
–––
360
–––
Coss eff.
Effective Output Capacitance
–––
560
–––
Diode Characteristics
Parameter
Min.
Typ. Max.
Units
IS
Continuous Source Current
–––
75
(Body Diode)
A
ISM
Pulsed Source Current
–––
360
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
22
33
ns
Qrr
Reverse Recovery Charge
–––
15
23
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
VGS = 0V, VDS = 1.0V, = 1.0MHz
VGS = 0V, VDS = 44V, = 1.0MHz
VGS = 0V, VDS = 0V to 44V
f
VGS = 10V e
VDD = 28V
ID = 75A
RG = 6.8
TJ = 25°C, IS = 75A, VGS = 0V e
TJ = 25°C, IF = 75A, VDD = 25V
di/dt = 100A/s
e
Conditions
VGS = 0V, ID = 250A
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 75A e
VDS = VGS, ID = 250A
VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VDS = 25V, ID = 75A
ID = 75A
VDS = 44V
Conditions
VGS = 10V e
VGS = 0V
VDS = 25V
= 1.0MHz
VGS = 20V
VGS = -20V
相關(guān)PDF資料
PDF描述
AUIRF1010ZL 94 A, 55 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
AUIRF1010ZS 94 A, 55 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRF1010Z 94 A, 55 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AUIRF1010ZSTRR 94 A, 55 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRF1018ES 79 A, 60 V, 0.0084 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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AUIRF1018E 功能描述:MOSFET 60V 79A 8.4 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF1018ES 功能描述:MOSFET 60V 79A 8.4 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF1018ESTRL 功能描述:MOSFET 60V 79A 8.4 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF1018ESTRR 功能描述:MOSFET 60V 79A 8.4 mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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