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參數(shù)資料
| 型號： | AUIRF1010EZSTRR |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 11/15頁 |
| 文件大?。?/td> | 375K |
| 代理商： | AUIRF1010EZSTRR |
AUIRF1010EZ/S/L
www.irf.com
5
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
,C
ap
ac
ita
nc
e(
pF
)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
102030405060
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
V
G
S
,G
at
e-
to
-S
ou
rc
e
V
ol
ta
ge
(V
)
VDS= 48V
VDS= 30V
VDS= 12V
ID= 51A
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
0.10
1.00
10.00
100.00
1000.00
I S
D
,R
ev
er
se
D
ra
in
C
ur
re
nt
(A
)
TJ = 25°C
TJ = 175°C
VGS = 0V
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100sec
Tc = 25°C
Tj = 175°C
Single Pulse
ance
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| AUIRF1010EZ | 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AUIRF1010EZSTRL | 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRF1010ZSTRL | 94 A, 55 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRF1010ZL | 94 A, 55 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| AUIRF1010ZS | 94 A, 55 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AUIRF1010Z | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF1010Z_12 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Advanced Process Technology |
| AUIRF1010ZL | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF1010ZS | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| AUIRF1010ZSTRL | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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