參數(shù)資料
型號(hào)： AU5517DR2
廠商： ON SEMICONDUCTOR
元件分類(lèi)： 運(yùn)動(dòng)控制電子
英文描述： Dual Operational Transconductance Amplifier
中文描述： DUAL OP-AMP, 5000 uV OFFSET-MAX, 2 MHz BAND WIDTH, PDSO16
封裝： SOIC-16
文件頁(yè)數(shù)： 7/14頁(yè)
文件大?。?/td> 194K
代理商： AU5517DR2
NE5517, NE5517A, AU5517
http://onsemi.com
7
APPLICATIONS
4, 13
2, 15
3, 14
+
NE5517
11
6
5, 12
1, 16
+15V
15V
7, 10
8, 9
INPUT
OUTPUT
390pF
15V
51
0.01
F
0.001
F
0.01
F
Figure 20. Unity Gain Follower
10k
1.3k
10k
62k
5k
CIRCUIT DESCRIPTION
The circuit schematic diagram of one-half of the
AU5517/NE5517, a dual operational transconductance
amplifier with linearizing diodes and impedance buffers, is
shown in Figure 21.
Transconductance Amplifier
The transistor pair, Q
4
and Q
5
, forms a transconductance
stage. The ratio of their collector currents (I
4
and I
5
,
respectively) is defined by the differential input voltage, V
IN
,
which is shown in Equation 1.
KT
V
IN
q
In
I
5
I
4
(eq. 1)
Where V
IN
is the difference of the two input voltages
KT
26 mV at room temperature (300
°
k).
Transistors Q
1
, Q
2
and diode D
1
form a current mirror which
focuses the sum of current I
4
and I
5
to be equal to amplifier bias
current I
B
:
I
4
I
5
I
B
(eq. 2)
If V
IN
is small, the ratio of I
5
and I
4
will approach unity and
the Taylor series of In function can be approximated as
InI
5
I
4
and I
4
5
I
4
1 2I
B
KT
q
KT
q
I
5
I
4
I
4
I
B
I
5
(eq. 3)
I
5
qInI
KT
q
I
5
I
4
2KT
q
I
4
I
B
V
IN
(eq. 4)
I
5
I
4
V
IN
I
B
2KT
q
The remaining transistors (Q
6
to Q
11
) and diodes (D
4
to D
6
)
form three current mirrors that produce an output current equal
to I
5
minus I
4
. Thus:
q
2KT
q
2KT
is then the transconductance of the amplifier
and is proportional to I
B
.
V
IN
I
B
I
O
(eq. 5)
The term
I
B
V+
11
D4
Q6
Q7
2,15
D2
Q4
Q5
D3
INPUT
4,13
+INPUT
AMP BIAS
INPUT
1,16
Q2
Q1
D1
V
6
Q10
D6
Q11
VOUTPUT
5,12
Q9
Q8
D5
Q14
Q15
Q16
R1
D7
D8
Q3
7,10
Q12
Q13
8,9
Figure 21. Circuit Diagram of NE5517
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