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參數(shù)資料
| 型號(hào)： | ATW2815S-MSTR |
| 英文描述： | Analog IC |
| 中文描述： | 模擬IC |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大?。?/td> | 113K |
| 代理商： | ATW2815S-MSTR |
2
SPECIFICATIONS
ATW2812D
ABSOLUTE MAXIMUM RATINGS
Input Voltage
Soldering Temperature
Case Temperature
-0.5V to 180V
300°C for 10 seconds
Operating-55°C to +125°C
Storage
-65°C to +135°C
TABLE I. Electrical Performance Characteristics
Test
Symbol
Conditions
-55
°
C
≤
T
C
≤
+125
°
C
V
IN
= 28 V dc ±5%, C
L
= 0 unless
otherwise specified
Group A
subgroups
Device
types
Limits
Unit
Min
Max
Output voltage
V
OUT
I
OUT
= 0
1
All
±11.88
±12.12
V
2,3
±11.76
±12.24
Output current 1/ 2/
I
OUT
V
IN
= 18, 28, and 40 V dc, each output
1,2,3
All
250
2250
mA
Output ripple voltage 3/
V
RIP
V
IN
= 18, 28, and 40 V dc,
B.W. = 20 Hz to 2 MHz
1,2,3
All
85
mV p-p
Line
regulation 4/
VR
LINE
V
IN
= 18, 28, and 40 V dc,
I
OUT
= 0, 1250, and 2500 mA
1
All
30
mV
2,3
60
Load regulation 4/
VR
LOAD
V
IN
= 18, 28, and 40 V dc,
I
OUT
= 0, 1250, and 2500 mA
1,2,3
All
120
mV
Cross regulation 5/
VR
CROS
10 percent to 90 percent load change
1,2,3
All
3.5
%
Input current
I
IN
I
OUT
= 0, inhibit (pin 8) tied to input
return (pin 10)
1,2,3
All
18
mA
I
OUT
= 0,
inhibit (pin 8) = open
50
Input ripple current 3/ 4/
I
RIP
I
OUT
= 2500 mA,
B.W. = 20 Hz to 2 MHz
1,2,3
All
50
mA p-p
Efficiency 4/
E
FF
I
OUT
= 2500 mA,
T
C
= +25
°
C
1
All
80
%
Isolation
ISO
Input to output or any pin
to case (except pin 7) at
500 V dc, T
C
= +25
°
C
1
All
100
M
Capacitive load 6/ 7/
C
L
No effect on dc performance,
T
C
= +25
°
C, total for both outputs
4
All
200
μF
Power dissipation
load fault
P
D
Overload, T
C
= +25
°
C 8/
1
All
12
W
Short circuit, T
C
= +25
°
C
9
See footnotes at end of table.
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