- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄51303 > ATP214TL 75 A, 60 V, 0.0081 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | ATP214TL |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 60 V, 0.0081 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE, ATPAK-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 345K |
| 代理商： | ATP214TL |
ATP214
No. A1712-2/4
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
60
V
Zero-Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0V
1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=38A
100
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=38A, VGS=10V
6.2
8.1
mΩ
RDS(on)2
ID=19A, VGS=4.5V
8.2
11.5
mΩ
RDS(on)3
ID=10A, VGS=4V
9.2
14
mΩ
Input Capacitance
Ciss
VDS=20V, f=1MHz
4850
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
370
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
280
pF
Turn-ON Delay Time
td(on)
See specied Test Circuit.
30
ns
Rise Time
tr
See specied Test Circuit.
240
ns
Turn-OFF Delay Time
td(off)
See specied Test Circuit.
360
ns
Fall Time
tf
See specied Test Circuit.
250
ns
Total Gate Charge
Qg
VDS=30V, VGS=10V, ID=75A
96
nC
Gate-to-Source Charge
Qgs
VDS=30V, VGS=10V, ID=75A
18.5
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=30V, VGS=10V, ID=75A
18
nC
Diode Forward Voltage
VSD
IS=75A, VGS=0V
0.93
1.2
V
Switching Time Test Circuit
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID=38A
RL=0.79Ω
VDD=30V
VOUT
ATP214
VIN
10V
0V
VIN
ID -- VDS
ID -- VGS
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
--
A
Gate-to-Source Voltage, VGS -- V
Drain
Current,
I
D
--
A
VDS=10V
IT15694
IT15695
0
4.5
4.0
1.5
0
75
40
5
25
65
55
60
70
50
30
15
20
45
35
10
2.0
0.2
0.6
1.2
0.4
0.8
1.6
1.4
1.0
1.8
0
100
80
50
60
90
70
3.0
1.0
2.5
0.5
2.0
3.5
40
30
10
20
4.5V
VGS=2.5V
--
2
5°
C
25
°C
T
c=75
°C
16.0V
8.0V
10.0V
3.5V
4.0V
Tc=25
°C
3.0V
6.0V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATP216TL | 35 A, 50 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET |
| ATP216 | 35 A, 50 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET |
| ATP602 | 5 A, 600 V, 2.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| ATP602 | 5 A, 600 V, 2.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| ATS-2FREQ | QUARTZ CRYSTAL RESONATOR, 3.579 MHz - 3.999 MHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATP214-TL-H | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ATP216 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP216_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP216-TL-H | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ATP218 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。