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參數(shù)資料
| 型號： | ATP201 |
| 元件分類： | JFETs |
| 英文描述： | 35 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE, ATPAK-3 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 256K |
| 代理商： | ATP201 |
ATP201
No. A1547-3/4
RDS(on) -- VGS
RDS(on) -- Tc
ID -- VDS
ID -- VGS
IS -- VSD
SW Time -- ID
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
--
A
Gate-to-Source Voltage, VGS -- V
Drain
Current,
I
D
--
A
Gate-to-Source Voltage, VGS -- V
Case Temperature, Tc --
°C
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
-
m
Ω
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
-
m
Ω
Drain Current, ID -- A
Switching
T
ime,
SW
T
ime
-
ns
Drain-to-Source Voltage, VDS -- V
Ciss,
Coss,
Crss
-
pF
Diode Forward Voltage, VSD -- V
Source
Current,
I
S
-
A
| yfs | -- I
D
Forward
T
ransfer
Admittance,
|
y
fs
|
-
S
Ciss, Coss, Crss -- VDS
IT14959
IT14962
--60 --40 --20
160
030
10
15
20
25
5
100
2
IT14966
IT14964
IT14963
0.1
1.0
23
5 7
23
5 7
23
5
3
1.0
1.4
1.2
1.0
0.8
0.4
0.2
0.6
0
0.001
0.01
5
7
3
2
0.1
5
7
3
2
1.0
5
7
3
2
10
5
7
3
22
100
5
7
3
7
5
7
5
2
3
10
5
2
1000
2
10
040
20
60
80
100 120 140
3
5
3
7
3
5
7
75
°C
25
°C
T
c=
--25
°C
--25
°C
T
c=75
°C
Tc=25
°C
Single pulse
Tc=
--25
°C
25
°C
75
°C
T
c=75
°C
--25
°C
VGS=0V
Single pulse
Ciss
Crss
IT14965
0.1
7 1.0
23
5
7
23
5
27 10
35
10
100
2
3
5
7
2
3
5
7
1000
2
3
5
7
td(off)
VDD=15V
VGS=10V
f=1MHz
t r
0.2
1.0
2.0
1.4
0.8
0.4
0.6
1.6
1.8
1.2
0
10
20
55
50
40
30
5
15
45
35
25
10
20
50
40
30
5
15
45
35
25
10
20
40
30
5
15
45
35
25
0
10
20
40
30
5
15
35
25
IT14961
246
79
11
16
13
15
35
8
10
12
14
0
IT14960
0.5
1.5
2.0
1.0
2.5
5.5
5.0
4.0
4.5
3.5
3.0
0
4.5V
VGS=4.0V
16
.0V
6.0V
VDS=10V
Single pulse
VDS=10V
Single pulse
tf
25
°C
VGS
=4.5V
, ID
=9A
VGS
=10.0V
, ID
=18A
10.0V
Coss
td(on)
8.0V
25
°C
ID=9A
18A
Tc=25
°C
Single pulse
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATP201 | 35 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET |
| ATP206 | 40 A, 40 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| ATP206 | 40 A, 40 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| ATP208 | 90 A, 40 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET |
| ATP208 | 90 A, 40 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATP201_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP201-TL-H | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ATP201-V-TL-H | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ATP202 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| ATP202_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
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