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參數(shù)資料
| 型號： | ATF13786 |
| 英文描述： | Surface Mount Gallium Arsenide FET for Oscillators |
| 中文描述： | 表面貼裝的砷化鎵場效應(yīng)晶體管振蕩器 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 47K |
| 代理商： | ATF13786 |
5-44
ATF-13786 Electrical Specifications,
T
C
= 25
°
C, V
DS
= 3 V, I
DS
= 40 mA
[4]
(unless noted)
Symbol
|S
21
|
2
P
1 dB
G
1 dB
PN
Parameters and Test Conditions
Insertion Power Gain
Units
dB
Min.
Typ.
6.0
Max.
f = 10 GHz
Power at 1 dB Gain Compression
f = 10 GHz
dBm
15
16.5
1 dB Compressed Gain
Phase Noise (100 kHz offset)
[5]
f = 10 GHz
f = 10 GHz
dB
6.5
7.5
-110
dBc/Hz
g
m
I
DSS
V
P
V
BDG
Transconductance
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, V
GS
= 0 V
V
DS
= 3 V, I
DS
= 1 mA
I
DG
= 0.1 mA
mS
25
55
Saturated Drain Current
Pinchoff Voltage
mA
V
50
-2.0
70
-1.5
100
-0.5
Gate - Drain Breakdown Voltage
V
6.5
7
Notes:
4. Recommended maximum bias conditions for use as an oscillator.
5. The superior phase noise of this product results from the use of a gate structure optimized for noise performance.
Typical performance of 10 GHz parallel resonated, lightly coupled oscillator using high Q dielectric resonator.
ATF-13786 Absolute Maximum Ratings
Symbol
V
DS
V
GS
V
GD
I
DS
P
T
T
CH
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation
[2,3]
Channel Temperature
Storage Temperature
Units
V
V
V
mA
mW
C
°
C
Absolute Maximum
[1]
4
-4
-6
I
DSS
225
150
-65 to +150
Notes:
1. Operation of this device above
any one of these conditions
may cause permanent damage.
2. T
CASE
= 25
o
C (T
CASE
is defined
to be the temperature at the
ends of pins 2 and 4 where
they contact the circuit
board).
3. Derate at 3.1 mW/
o
C for
T
C
>60
o
C.
Thermal Resistance
[2]
:
θ
jc
= 325
°
C/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-13786 | Surface Mount Gallium Arsenide FET for Oscillators |
| ATF-13786-TR1 | Surface Mount Gallium Arsenide FET for Oscillators |
| ATF13786 | Surface Mount Gallium Arsenide FET for Oscillators |
| ATF-13786 | Surface Mount Gallium Arsenide FET for Oscillators |
| ATF-13786-STR | Surface Mount Gallium Arsenide FET for Oscillators |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-13786 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Surface Mount Gallium Arsenide FET for Oscillators |
| ATF-13786-STR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Surface Mount Gallium Arsenide FET for Oscillators |
| ATF-13786-TR1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Surface Mount Gallium Arsenide FET for Oscillators |
| ATF-13XXX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Noise Gallium Arsenide FET -- Reliability Data (20K in pdf) |
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