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參數(shù)資料
| 型號： | ATF10136 |
| 英文描述： | 0.5-12 GHz Low Noise Gallium Arsenide FET |
| 中文描述： | 0.5-12 GHz的低噪聲砷化鎵場效應管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 46K |
| 代理商： | ATF10136 |
5-23
0.5–12 GHz Low Noise
Gallium Arsenide FET
Technical Data
Features
Low Noise Figure:
0.5 dB Typical at 4 GHz
Low Bias:
V
DS
= 2 V, I
DS
=20 mA
High Associated Gain:
13.0 dB Typical at 4 GHz
High Output Power:
20.0 dBm Typical P
1 dB
at 4 GHz
Cost Effective Ceramic
Microstrip Package
Tape-and Reel Packaging
Option Available
[1]
ATF-10136
36 micro-X Package
Electrical Specifications, T
A
= 25
°
C
Symbol
NF
O
Optimum Noise Figure: V
DS
= 2 V, I
DS
= 25 mA
Parameters and Test Conditions
Units Min.
dB
dB
dB
dB
dB
dB
dBm
Typ. Max.
0.4
0.5
0.8
16.5
13.0
11.0
20.0
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 4.0 GHz
0.6
G
A
Gain @ NF
O
; V
DS
= 2 V, I
DS
= 25 mA
12.0
P
1 dB
Power Output @ 1 dB Gain Compression
V
DS
= 4 V, I
DS
= 70 mA
1 dB Compressed Gain: V
DS
= 4 V, I
DS
= 70 mA
Transconductance: V
DS
= 2 V, V
GS
= 0 V
Saturated Drain Current: V
DS
= 2 V, V
GS
= 0 V
Pinchoff Voltage: V
DS
= 2 V, I
DS
= 1 mA
G
1 dB
g
m
I
DSS
V
P
Note:
1.
Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
f = 4.0 GHz
dB
12.0
140
130
-1.3
mmho
mA
V
70
70
-4.0
180
-0.5
Description
The ATF-10136 is a high performance
gallium arsenide Schottky-barrier-
gate field effect transistor housed in a
cost effective microstrip package. Its
premium noise figure makes this
device appropriate for use in the first
stage of low noise amplifiers operat-
ing in the 0.5-12 GHz frequency range.
This GaAs FET device has a nominal
0.3 micron gate length using airbridge
interconnects between drain fingers.
Total gate periphery is 500 microns.
Proven gold based metallization
systems and nitride passivation
assure a rugged, reliable device.
5965-8701E
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PDF描述 |
|---|---|
| ATF-10136 | 0.5-12 GHz Low Noise Gallium Arsenide FET |
| ATF-10136-STR | ER 3C 3#16 PIN RECP BOX |
| ATF-10136-TR1 | 0.5-12 GHz Low Noise Gallium Arsenide FET |
| ATF35143 | Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-10136 | 制造商:Agilent Technologies 功能描述: 制造商:AGILNT 功能描述: |
| ATF-10136-STR | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:0.5-12 GHz Low Noise Gallium Arsenide FET |
| ATF-10136-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:0.5-12 GHz Low Noise Gallium Arsenide FET |
| ATF10170 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 70MA I(DSS) | MICRO-X |
| ATF10235 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | SOT-173VAR |
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