參數(shù)資料
型號： ATF-551M4-TR1G
廠商： AGILENT TECHNOLOGIES INC
元件分類： 小信號晶體管
英文描述： X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝： 1.40 MM X 1.20 MM, 0.70 MM HEIGHT, MINIATURE, LEADLESS PACKAGE-4
文件頁數(shù)： 8/23頁
文件大?。?/td> 183K
代理商： ATF-551M4-TR1G
16
ATF-551M4 Typical Scattering Parameters,
VDS = 3V, IDS = 20 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.995
-6.8
22.91
13.987
175.4
0.005
86.1
0.781
-3.3
34.47
0.5
0.943
-33.0
22.35
13.101
155.8
0.024
70.5
0.730
-15.2
27.37
0.9
0.883
-56.9
21.53
11.932
140.7
0.039
59.5
0.672
-26.1
24.86
1.0
0.870
-62.4
21.30
11.614
137.2
0.042
56.9
0.654
-28.5
24.42
1.5
0.798
-87.6
20.00
10.004
121.5
0.054
46.3
0.569
-38.5
22.68
1.9
0.752
-104.9
18.91
8.820
111.0
0.061
39.7
0.506
-44.6
21.60
2.0
0.743
-108.9
18.64
8.555
108.6
0.062
38.3
0.493
-46.0
21.40
2.5
0.704
-126.7
17.35
7.368
97.7
0.067
32.4
0.431
-51.6
20.41
3.0
0.679
-142.1
16.14
6.412
88.4
0.070
28.1
0.383
-56.0
19.62
4.0
0.660
-166.3
14.03
5.028
72.7
0.074
22.5
0.314
-63.5
18.32
5.0
0.662
175.3
12.25
4.099
59.4
0.076
19.2
0.270
-71.5
17.32
6.0
0.664
162.6
10.85
3.488
48.3
0.080
18.3
0.237
-76.2
16.39
7.0
0.667
150.9
9.62
3.027
37.5
0.084
17.2
0.220
-85.2
14.66
8.0
0.670
141.3
8.63
2.701
27.2
0.090
16.3
0.207
-95.2
13.18
9.0
0.679
130.9
7.73
2.435
16.8
0.096
14.6
0.198
-107.6
12.20
10.0
0.677
118.1
6.92
2.219
5.9
0.104
11.7
0.198
-120.6
11.21
11.0
0.683
105.4
6.19
2.040
-4.8
0.114
8.4
0.205
-133.4
10.64
12.0
0.689
91.4
5.49
1.881
-16.0
0.124
3.8
0.216
-145.2
10.10
13.0
0.705
80.9
4.75
1.727
-26.8
0.134
-1.0
0.210
-158.4
9.62
14.0
0.742
66.4
4.05
1.594
-38.6
0.145
-7.7
0.199
-178.0
10.41
15.0
0.751
55.0
3.23
1.451
-49.8
0.153
-14.4
0.207
160.3
8.80
16.0
0.806
45.1
2.27
1.298
-60.4
0.159
-21.1
0.225
138.1
9.12
17.0
0.826
37.2
1.32
1.164
-70.8
0.165
-27.9
0.265
114.0
8.48
18.0
0.874
31.1
0.33
1.039
-80.8
0.170
-34.9
0.320
94.1
7.86
Freq
Fmin
Γ
opt
Γ
opt
Rn/50
Ga
GHz
dB
Mag.
Ang.
dB
0.5
0.17
0.62
-6.2
0.12
24.92
0.9
0.18
0.55
6.0
0.11
22.79
1.0
0.24
0.50
9.5
0.10
22.59
1.9
0.39
0.43
37.5
0.10
19.22
2.0
0.36
0.41
41.2
0.09
19.00
2.4
0.42
0.37
50.9
0.09
17.83
3.0
0.50
0.29
73.6
0.08
16.72
3.9
0.57
0.25
109.4
0.07
15.18
5.0
0.68
0.28
151.6
0.06
13.80
5.8
0.83
0.32
172.5
0.05
12.93
6.0
0.85
0.33
175.6
0.05
12.77
7.0
0.93
0.36
-162.7
0.06
11.84
8.0
1.05
0.41
-149.1
0.08
11.09
9.0
1.19
0.46
-135.5
0.10
10.53
10.0
1.39
0.45
-119.4
0.17
9.64
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
Typical Noise Parameters,
VDS = 3V, IDS = 20 mA
40
30
20
10
0
-10
Figure 34. MSG/MAG and |S21|
2 vs.
Frequency at 3V, 20 mA.
FREQUENCY (GHz)
020
10
515
MSG/MAG
and
|S
21
|
2 (dB)
|S21|
2
MAG
MSG
相關PDF資料
PDF描述
ATF-551M4-TR2 X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-551M4-TR1 X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-551M4-BLK X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
AUIRF1010EZL 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
AUIRF1010EZS 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
ATF-551M4-TR2 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
ATF-58143 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-58143-BLK 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-58143-BLKG 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
ATF-58143-BLKG 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*