- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄42904 > ATF-551M4-BLKG (AGILENT TECHNOLOGIES INC) X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET PDF資料下載
參數(shù)資料
| 型號： | ATF-551M4-BLKG |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | 1.40 MM X 1.20 MM, 0.70 MM HEIGHT, MINIATURE, LEADLESS PACKAGE-4 |
| 文件頁數(shù)： | 9/23頁 |
| 文件大小： | 183K |
| 代理商： | ATF-551M4-BLKG |
17
ATF-551M4 Typical Scattering Parameters,
VDS = 3V, IDS = 30 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.994
-7.4
23.90
15.662
175.0
0.005
86.1
0.760
-3.4
34.96
0.5
0.936
-35.3
23.25
14.544
154.5
0.022
69.8
0.705
-15.4
28.20
0.9
0.870
-60.4
22.32
13.058
138.7
0.035
58.7
0.644
-26.2
25.72
1.0
0.856
-66.1
22.05
12.665
135.2
0.038
56.2
0.624
-28.5
25.23
1.5
0.781
-92.0
20.61
10.732
119.4
0.048
46.0
0.539
-37.7
23.49
1.9
0.736
-109.4
19.44
9.374
108.9
0.054
40.1
0.480
-43.1
22.40
2.0
0.726
-113.3
9.072
106.6
0.055
38.8
0.467
-44.2
22.17
2.5
0.690
-131.0
17.79
7.753
96.0
0.059
33.7
0.410
-49.0
21.19
3.0
0.668
-146.1
16.54
6.713
86.9
0.062
30.3
0.367
-52.7
20.35
4.0
0.653
-169.6
14.38
5.234
71.7
0.066
26.1
0.307
-59.2
18.99
5.0
0.656
172.7
12.58
4.258
58.7
0.069
23.8
0.268
-66.7
17.90
6.0
0.659
160.5
11.17
3.618
47.9
0.074
23.6
0.238
-70.9
16.89
7.0
0.663
149.0
9.93
3.138
37.2
0.079
22.9
0.224
-79.8
14.61
8.0
0.666
139.6
8.94
2.798
27.1
0.086
21.9
0.211
-89.5
13.35
9.0
0.676
129.3
8.03
2.522
16.8
0.094
20.1
0.203
-101.5
12.55
10.0
0.674
116.6
7.22
2.296
5.9
0.103
16.9
0.202
-114.5
11.58
11.0
0.680
104.1
6.48
2.109
-4.6
0.113
13.1
0.208
-127.3
11.01
12.0
0.688
90.3
5.77
1.944
-15.8
0.124
8.0
0.219
-139.4
10.62
13.0
0.705
80.1
5.03
1.784
-26.4
0.135
3.0
0.213
-152.3
10.38
14.0
0.743
65.8
4.34
1.648
-38.0
0.147
-4.1
0.200
-170.8
10.50
15.0
0.751
54.5
3.53
1.502
-49.2
0.156
-11.1
0.203
166.8
9.84
16.0
0.806
44.9
2.56
1.343
-59.8
0.162
-18.1
0.218
143.9
9.19
17.0
0.826
37.0
1.64
1.208
-70.1
0.168
-25.2
0.254
118.4
8.57
18.0
0.875
31.0
0.67
1.080
-80.2
0.174
-32.4
0.306
97.4
7.93
Freq
Fmin
Γ
opt
Γ
opt
Rn/50
Ga
GHz
dB
Mag.
Ang.
dB
0.5
0.16
0.60
-6.2
0.11
25.60
0.9
0.18
0.55
6.4
0.11
23.17
1.0
0.24
0.47
10.1
0.10
23.19
1.9
0.39
39.1
0.09
19.73
2.0
0.36
0.38
42.7
0.09
19.48
2.4
0.45
0.33
54.2
0.09
18.36
3.0
0.52
0.26
79.0
0.08
17.20
3.9
0.59
0.23
119.0
0.06
15.66
5.0
0.71
0.28
162.1
0.05
14.28
5.8
0.86
0.33
-179.3
0.05
13.39
6.0
0.89
0.33
-176.7
0.05
13.20
7.0
0.99
0.37
-156.1
0.07
12.27
8.0
1.12
0.42
-143.5
0.09
11.50
9.0
1.26
0.48
-130.8
0.12
10.96
10.0
1.50
0.46
-115.1
0.20
10.01
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
Typical Noise Parameters,
VDS = 3V, IDS = 30 mA
40
30
20
10
0
-10
Figure 35. MSG/MAG and |S21|
2 vs.
Frequency at 3V, 30 mA.
FREQUENCY (GHz)
020
10
515
MSG/MAG
and
|S
21
|
2 (dB)
|S21|
2
MAG
MSG
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-551M4-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-TR1G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-551M4-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-551M4-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-58143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-58143-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-58143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。