參數(shù)資料
型號: ATF-551M4-BLK
元件分類: 小信號晶體管
英文描述: X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝: 1.40 MM X 1.20 MM, 0.70 MM HEIGHT, MINIATURE, LEADLESS PACKAGE-4
文件頁數(shù): 18/23頁
文件大?。?/td> 406K
代理商: ATF-551M4-BLK
4
ATF-551M4 Typical Performance Curves
Notes:
1. Measurements at 900MHz were made using an ICM fixture with a double stub tuner at the input tuned for low noise and a double stub tuner
at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From
these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
Figure 6. Gain vs. Ids and Vds at 900 MHz[1].
Ids (mA)
G
A
IN
(d
B
)
0
35
15
5
30
25
20
10
26
25
24
23
22
21
20
19
18
2V
2.7V
3V
Figure 7. Fmin vs. Ids and Vds at 900 MHz[2].
Ids (mA)
Fm
in
(d
B
)
0
35
15
5
30
25
20
10
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
2V
2.7V
3V
Figure 9. IIP3 vs. Ids and Vds at 900 MHz[1].
Ids (mA)
II
P3
(d
B
m
)
0
35
15
5
30
25
20
10
7
6
5
4
3
2
1
0
-1
-2
2V
2.7V
3V
Figure 10. P1dB vs. Ids and Vds at 900 MHz[1].
Ids (mA)
P1
dB
(d
B
m
)
0
35
15
5
30
25
20
10
18
17
16
15
14
13
12
11
10
9
2V
2.7V
3V
Figure 8. OIP3 vs. Ids and Vds at 900 MHz[1].
Ids (mA)
O
IP
3
(d
B
m
)
0
35
15
5
30
25
20
10
32
30
28
26
24
22
20
18
16
2V
2.7V
3V
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