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參數(shù)資料
| 型號： | ATF-55143-TR2G |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件頁數(shù)： | 5/21頁 |
| 文件大?。?/td> | 338K |
| 代理商： | ATF-55143-TR2G |
13
ATF-55143 Typical Scattering Parameters, V
DS = 3V, IDS = 30 mA
Freq.
S
11
S
21
S
12
S
22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.996
7.9
24.3
16.407
173.9
0.005
85.6
0.729
4.5
35.16
0.5
0.937
38.1
23.64
15.205
150.4
0.021
68.8
0.683
21.2
28.60
0.9
0.840
64.1
22.44
13.246
130.9
0.034
56.1
0.620
34.3
25.91
1.0
0.819
70.1
22.11
12.753
126.6
0.036
53.5
0.601
36.8
25.49
1.5
0.712
95.7
20.43
10.507
108.4
0.046
43.4
0.531
46.5
23.59
1.9
0.646
112.8
19.2
9.117
96.4
0.051
37.7
0.488
51.8
22.52
2.0
0.631
116.8
18.91
8.823
93.7
0.052
36.6
0.479
52.9
22.30
2.5
0.571
135.8
17.59
7.578
80.9
0.057
31.3
0.437
57.7
21.24
3.0
0.531
153.9
16.42
6.625
69.4
0.062
26.6
0.398
61.8
20.29
4.0
0.499
171.8
14.49
5.303
48.1
0.071
18.1
0.328
71.6
18.73
5.0
0.512
140.9
12.84
4.386
28.1
0.078
9.2
0.273
84.7
16.32
6.0
0.529
116
11.35
3.693
9.4
0.085
0.7
0.242
98.5
14.36
7.0
0.552
94.7
10.07
3.188
8.3
0.092
9
0.214
112.9
12.98
8.0
0.573
73.9
8.91
2.79
25.6
0.096
18.6
0.179
120.5
11.65
9.0
0.609
55.1
7.94
2.496
42.7
0.107
25.8
0.134
128.4
10.92
10.0
0.684
37.3
7.05
2.251
61.3
0.118
39.2
0.064
173.3
10.93
11.0
0.744
21.6
5.91
1.975
79.5
0.123
51.9
0.075
87.5
10.53
12.0
0.786
7.9
4.83
1.744
96.4
0.128
64.3
0.141
49.7
10.16
13.0
0.816
7.2
3.86
1.56
113.9
0.131
77.5
0.187
26.4
9.84
14.0
0.842
22.8
2.93
1.401
132.6
0.133
91.7
0.250
5.1
9.51
15.0
0.870
37.1
1.56
1.197
151.1
0.128
106
0.367
12.6
8.39
16.0
0.866
50.3
0.01
0.998
168.2
0.122
119.1
0.467
24.8
6.39
17.0
0.882
59.7
1.4
0.851
177
0.12
130.8
0.543
38.2
5.77
18.0
0.927
69.9
2.55
0.746
161.2
0.115
144.8
0.602
52.8
8.12
Freq
F
min
Γ
opt
Γ
opt
R
n/50
G
a
GHz
dB
Mag.
Ang.
dB
0.5
0.19
0.59
18.4
0.09
26.27
0.9
0.25
0.5
25.5
0.09
24.41
1.0
0.26
0.52
30.7
0.09
23.98
1.9
0.41
0.44
50.6
0.08
20.51
2.0
0.42
0.43
54.5
0.08
20.18
2.4
0.49
0.34
65.1
0.08
18.92
3.0
0.59
0.27
84.7
0.07
17.28
3.9
0.72
0.17
132.6
0.06
15.33
5.0
0.88
0.19
156.2
0.06
13.61
5.8
1.02
0.24
125.3
0.09
12.71
6.0
1.06
0.25
118.8
0.1
12.52
7.0
1.2
0.32
88.8
0.17
11.73
8.0
1.37
0.39
62.7
0.28
11.08
9.0
1.53
0.47
43.1
0.43
10.41
10.0
1.66
0.57
27
0.65
9.58
Notes:
1. F
min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true F
min is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes con
necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
Typical Noise Parameters, V
DS = 3V, IDS = 30 mA
Figure 32. MSG/MAG and |S21|2 vs.
Frequency at 3V, 30 mA.
MSG
|S21|
2
FREQUENCY (GHz)
MSG/MAG
and
|S
21
|
2 (dB)
0
20
10
5
15
40
35
30
25
20
15
10
5
0
-5
MAG
相關PDF資料 |
PDF描述 |
|---|---|
| ATF-55143-BLKG | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR1G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR2 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-551M4 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package |
| ATF-551M4-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-551M4-BLK | 制造商:Avago Technologies 功能描述:Transistor |
| ATF-551M4-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-551M4-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
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