參數(shù)資料
型號(hào)： ATF-55143-BLKG
元件分類： 小信號(hào)晶體管
英文描述： C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝： LEAD FREE, PLASTIC, SC-70, 4 PIN
文件頁(yè)數(shù)： 10/21頁(yè)
文件大?。?/td> 338K
代理商： ATF-55143-BLKG
18
Noise Parameter Applications Information
F
min values at 2 GHz and higher are based on measure
ments while the F
mins below 2 GHz have been extrapo
lated. The F
min values are based on a set of 16 noise
figure measurements made at 16 different impedances
using an ATN NP5 test system. From these measure
ments, a true F
min is calculated. Fmin represents the true
minimum noise figure of the device when the device is
presented with an impedance matching network that
transforms the source impedance, typically 50, to an
impedance represented by the reflection coefficient Γ
o.
The designer must design a matching network that will
present Γ
o to the device with minimal associated circuit
losses. The noise figure of the completed amplifier is
equal to the noise figure of the device plus the losses of
the matching network preceding the device. The noise
figure of the device is equal to F
min only when the device
is presented with Γ
o. If the reflection coefficient of the
matching network is other than Γ
o, then the noise fig
ure of the device will be greater than F
min based on the
following equation.
NF = F
min +
4 R
n
|Γ
s – Γo |
2
Zo (|1 + Γ
o|
2
)(1|Γ
s|
2
)
Where R
n /Zo is the normalized noise resistance, Γo is
the optimum reflection coefficient required to produce
F
min and Γs is the reflection coefficient of the source
impedance actually presented to the device. The losses
of the matching networks are nonzero and they will
also add to the noise figure of the device creating a
higher amplifier noise figure. The losses of the matching
networks are related to the Q of the components and
associated printed circuit board loss. Γ
o is typically fairly
low at higher frequencies and increases as frequency is
lowered. Larger gate width devices will typically have a
lower Γ
o as compared to narrower gate width devices.
Typically for FETs, the higher Γ
o usually infers that an
impedance much higher than 50 is required for the
device to produce F
min. At VHF frequencies and even
lower L Band frequencies, the required impedance can
be in the vicinity of several thousand ohms. Matching
to such a high impedance requires very hiQ compo
nents in order to minimize circuit losses. As an example
at 900 MHz, when airwound coils (Q>100) are used for
matching networks, the loss can still be up to 0.25 dB
which will add directly to the noise figure of the device.
Using multilayer molded inductors with Qs in the 30 to
50 range results in additional loss over the airwound
coil. Losses as high as 0.5 dB or greater add to the typi
cal 0.15 dB F
min of the device creating an amplifier noise
figure of nearly 0.65 dB. A discussion concerning cal
culated and measured circuit losses and their effect on
amplifier noise figure is covered in Avago Technologies
Application 1085.
相關(guān)PDF資料
PDF描述
ATF-55143-TR1G C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-55143-TR2 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-55143-BLK C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-55143-TR1 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-551M4-TR2G X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-55143-BLKG 制造商:Avago Technologies 功能描述:RF BIPOLAR TRANSISTOR
ATF-55143-TR1 功能描述:IC TRANS E-PHEMT 2GHZ SOT-343 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
ATF-55143-TR1G 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-55143-TR2 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-55143-TR2G 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
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