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參數(shù)資料
| 型號(hào)： | ATF-541M4-TR1G |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | 1.4 MM X 1.2 MM, 0.7 MM HEIGHT, MINIATURE PACKAGE-4 |
| 文件頁數(shù)： | 11/16頁 |
| 文件大?。?/td> | 166K |
| 代理商： | ATF-541M4-TR1G |
4
ATF-541M4 Typical Performance Curves
Notes:
1. Fmin and associated gain at minimum noise
figure (Ga) values are based on a set of
16 noise figure measurements made at
16 different impedances using an ATN NP5
test system. From these measurements a true
Fmin and Ga is calculated. Refer to the noise
parameter application section for more
information.
2. Measurements obtained using production
test board described in Figure 5.
3. Input tuned for minimum NF and the output
tuned for maximum OIP3 using an
InterContinental Microwave (ICM) test
fixture, double stub tuners and bias tees.
Figure 8. Gain, OIP3 & P1dB vs. Ids Tuned
for Max OIP3 and Min NF at 2 GHz,
Vds = 3V
[2].
Figure 10. Fmin vs. Frequency vs. Ids,
Vds = 3V
[1].
Figure 9. Gain, OIP3 & P1dB vs. Ids Tuned
for Max OIP3 and Min NF at 900 MHz,
Vds = 3V
[3].
Figure 11. Ga vs. Frequency vs. Ids,
Vds = 3V
[1].
Figure 6. Fmin vs. Ids at 2 GHz, Vds = 3V
[1]
Ids (mA)
Fmin
(dB)
0
100
40
20
80
60
0.60
0.55
0.50
0.45
0.40
0.35
Figure 7. Fmin vs. Ids at 900 MHz, Vds = 3V
[1]
Ids (mA)
Fmin
(dB)
0
100
40
20
80
60
0.26
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
Ids (mA)
dB/dBm
0
100
40
20
80
60
40
35
30
25
20
15
10
Gain
OIP3
P1dB
Ids (mA)
dB/dBm
0
100
40
20
80
60
Gain
OIP3
P1dB
40
35
30
25
20
15
80 mA
60 mA
40 mA
FREQUENCY (GHz)
Fmin
(dB)
012
4
28
10
6
2.5
2.0
1.5
1.0
0.5
0
40 mA
60 mA
80 mA
FREQUENCY (GHz)
Ga
(dB)
012
4
28
10
6
30
25
20
15
10
5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-541M4-TR2G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-541M4-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-541M4-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-541M4-BLKG | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-541M4-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-541M4-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF55143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-55143 | 制造商:Avago Technologies 功能描述:MOSFET RF HEMT SOT-343 |
| ATF-55143-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-55143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
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