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參數(shù)資料
| 型號： | ATF-541M4-BLKG |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | 1.4 MM X 1.2 MM, 0.7 MM HEIGHT, MINIATURE PACKAGE-4 |
| 文件頁數(shù)： | 12/16頁 |
| 文件大?。?/td> | 166K |
| 代理商： | ATF-541M4-BLKG |
5
ATF-541M4 Typical Performance Curves, continued
Notes:
1. Input tuned for minimum NF and the output tuned for maximum OIP3
using an InterContinental Microwave (ICM) test fixture, double stub
tuners and bias tees.
2. Gamma out is the reflection coefficient of the matching circuit presented
to the output of the device.
Gamma[2]
OIP3
P1dB
Freq
Out_Mag.
(GHz)
(Mag)
(Degrees)
(dBm)
0.9
0.006
23
35.04
19.47
2.0
0.314
-167
35.82
21.36
3.9
0.321
134
36.60
20.37
5.8
0.027
89
37.62
19.38
ATF-541M4 Output Reflection Coefficient Parameters Tuned
for Maximum Output IP3[1]; VDS = 3V, IDS = 60 mA
Figure 12. Gain vs. Freq. and Temperature
Tuned for Max OIP3 and Min NF at
Vds = 3V, Ids = 60 mA
[1].
Figure 13. OIP3 vs. Freq. and Temperature
Tuned for Max OIP3 and Min NF at
Vds = 3V, Ids = 60 mA
[1].
Figure 14. NF vs. Freq. and Temperature
Tuned for Max OIP3 and Min NF at
Vds = 3V, Ids = 60 mA
[1].
FREQUENCY (GHz)
OIP3
(dBm)
07
3
16
5
4
2
45
40
35
30
25
20
15
10
25
°C
-40
°C
85
°C
FREQUENCY (GHz)
NF
(dB)
07
3
16
5
4
2
2.0
1.5
1.0
0.5
0
25
°C
-40
°C
85
°C
FREQUENCY (GHz)
P1dB
(dBm)
07
3
16
5
4
2
23
22
21
20
19
18
17
25
°C
-40
°C
85
°C
Figure 15. P1dB vs. Freq. and Temperature
Tuned for Max OIP3 and Min NF at
Vds = 3V, Ids = 60 mA
[1].
FREQUENCY (GHz)
GAIN
(dB)
07
3
16
5
4
2
30
25
20
15
10
5
0
25
°C
-40
°C
85
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-541M4-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-541M4-TR2 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-541M4-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-541M4-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-BLKG | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-541M4-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-541M4-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF55143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-55143 | 制造商:Avago Technologies 功能描述:MOSFET RF HEMT SOT-343 |
| ATF-55143-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
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