參數(shù)資料
型號(hào)： ATF-541M4-BLK
廠商： AGILENT TECHNOLOGIES INC
元件分類： 小信號(hào)晶體管
英文描述： X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝： 1.4 MM X 1.2 MM, 0.7 MM HEIGHT, MINIATURE PACKAGE-4
文件頁(yè)數(shù)： 9/16頁(yè)
文件大?。?/td> 166K
代理商： ATF-541M4-BLK
2
ATF-541M4 Absolute Maximum Ratings[1]
Absolute
Symbol
Parameter
Units
Maximum
V
DS
Drain-Source Voltage[2]
V5
V
GS
Gate-Source Voltage[2]
V
-5 to 1
VGD
Gate Drain Voltage [2]
V
-5 to 1
IDS
Drain Current[2]
mA
120
IGS
Gate Current[5]
mA
2
Pdiss
Total Power Dissipation [3]
mW
360
Pin max.
RF Input Power[5]
dBm
13
TCH
Channel Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
θjc
Thermal Resistance [4]
°C/W
212
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Assumes DC quiescent conditions.
3. Source lead temperature is 25
°C. Derate
4.7 mW/
°C for TL > 74°C.
4. Thermal resistance measured using
150
°C Liquid Crystal Measurement method.
5. The device can handle +13 dBm RF Input
Power provided IGS is limited to 2 mA. IGS at
P1dB drive level is bias circuit dependent. See
applications section for additional information.
Product Consistency Distribution Charts [6, 7]
VDS (V)
Figure 1. Typical I-V Curves.
(VGS= 0.1 V per step)
I DS
(mA)
0.4V
0.5V
0.6V
0.7V
0.3V
02
14
6
5
37
120
100
80
60
40
20
0
OIP3 (dBm)
Figure 2. OIP3 @ 2 GHz, 3 V, 60 mA.
LSL = 33.0, Nominal = 35.82
29
35
32
38
41
320
240
160
80
0
Cpk = 0.85
Stdev = 1.14
-3 Std
GAIN (dB)
Figure 3. Gain @ 2 GHz, 3 V, 60 mA.
LSL = 15.5, Nominal = 17.5, USL = 18.5
15
17
16
19
18
20
Cpk = 1.16
Stdev = 0.30
-3 Std
+3 Std
320
240
160
80
0
NF (dB)
Figure 4. NF @ 2 GHz, 3 V, 60 mA.
Nominal = 0.5, USL = 0.9
0.3
0.7
0.5
0.9
1.1
300
250
200
150
100
50
0
Cpk = 1.72
Stdev = 0.072
+3 Std
Notes:
6. Distribution data sample size is 500 samples taken from 6 different wafers. Future wafers allocated to this product may have nominal values anywhere
between the upper and lower limits.
7. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on
production test equipment. Circuit losses have been de-embedded from actual measurements.
相關(guān)PDF資料
PDF描述
ATF-541M4-TR1 X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-541M4-BLKG X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-541M4-TR2 X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-541M4-TR2 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-541M4-BLK C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-541M4-BLK 制造商:Avago Technologies 功能描述:RF BIPOLAR TRANSISTOR
ATF-541M4-TR1 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-541M4-TR2 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF55143 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-55143 制造商:Avago Technologies 功能描述:MOSFET RF HEMT SOT-343
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