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參數(shù)資料
| 型號： | ATF-54143-TR2G |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | PLASTIC, SC-70, 4 PIN |
| 文件頁數(shù)： | 13/17頁 |
| 文件大?。?/td> | 212K |
| 代理商： | ATF-54143-TR2G |
5
ATF-54143 Typical Performance Curves,
continued
Note:
1. Fmin values at 2 GHz and higher are based on
measurements while the Fmins below 2 GHz
have been extrapolated. The Fmin values are
based on a set of 16 noise figure measure-
ments made at 16 different impedances using
an ATN NP5 test system. From these
measurements a true Fmin is calculated.
Refer to the noise parameter application
section for more information.
ATF-54143 Reflection Coefficient Parameters tuned for Maximum Output IP3,
VDS = 3V, IDS = 60 mA
Freq
ΓOut_Mag.[1]
ΓOut_Ang.[1]
OIP3
P1dB
(GHz)
(Mag)
(Degrees)
(dBm)
0.9
0.017
115
35.54
18.4
2.0
0.026
-85
36.23
20.38
3.9
0.013
173
37.54
20.28
5.8
0.025
102
35.75
18.09
Note:
1. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device.
Figure 17. P1dB vs. Frequency and Temp
Tuned for Max OIP3 and Fmin at 3V, 60 mA.
25
°C
-40
°C
85
°C
FREQUENCY (GHz)
P1dB
(dBm)
06
2
14
5
3
21
20.5
20
19.5
19
18.5
18
17.5
17
Figure 18. Fmin[1] vs. Frequency and Ids
at 3V.
FREQUENCY (GHz)
Fmin
(dB)
02
14
5
6
37
60 mA
40 mA
80 mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Figure 15. Fmin[2] vs. Frequency and Temp
Tuned for Max OIP3 and Fmin at 3V, 60 mA.
25
°C
-40
°C
85
°C
FREQUENCY (GHz)
Fmin
(dB)
06
2
14
5
3
2
1.5
1.0
0.5
0
Figure 16. OIP3 vs. Frequency and Temp
Tuned for Max OIP3 and Fmin at 3V, 60 mA.
25
°C
-40
°C
85
°C
FREQUENCY (GHz)
OIP3
(dBm)
06
2
14
5
3
45
40
35
30
25
20
15
10
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PDF描述 |
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| ATF-541M4-TR1G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-541M4-TR2G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-541M4-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-541M4-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-541M4-BLKG | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-541M4 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package |
| ATF-541M4-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-541M4-BLK | 制造商:Avago Technologies 功能描述:RF BIPOLAR TRANSISTOR |
| ATF-541M4-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-541M4-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
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