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參數(shù)資料
| 型號： | ATF-54143-TR1 |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | PLASTIC, SC-70, 4 PIN |
| 文件頁數(shù)： | 10/17頁 |
| 文件大小： | 212K |
| 代理商： | ATF-54143-TR1 |
2
ATF-54143 Absolute Maximum Ratings[1]
Absolute
Symbol
Parameter
Units
Maximum
V
DS
Drain - Source Voltage[2]
V5
V
GS
Gate - Source Voltage[2]
V
-5 to 1
V
GD
Gate Drain Voltage [2]
V
-5 to 1
I
DS
Drain Current [2]
mA
120
P
diss
Total Power Dissipation [3]
mW
725
P
in max.
RF Input Power
dBm
13[5]
I
GS
Gate Source Current
mA
2[5]
T
CH
Channel Temperature
°C
150
T
STG
Storage Temperature
°C
-65 to 150
θjc
Thermal Resistance [4]
°C/W
162
Notes:
1. Operation of this device in excess of any one
of these parameters may cause permanent
damage.
2. Assumes DC quiescent conditions.
3. Source lead temperature is 25
°C. Derate
6.2 mW/
°C for TL > 33°C.
4. Thermal resistance measured using
150
°C Liquid Crystal Measurement method.
5. The device can handle +13 dBm RF Input
Power provided I
GS is limited to 2 mA. IGS at
P
1dB drive level is bias circuit dependent. See
application section for additional information.
Product Consistency Distribution Charts [6, 7]
VDS (V)
Figure 1. Typical I-V Curves.
(VGS = 0.1 V per step)
I DS
(mA)
0.4V
0.5V
0.6V
0.7V
0.3V
02
14
6
5
37
120
100
80
60
40
20
0
OIP3 (dBm)
Figure 2. OIP3 @ 2 GHz, 3 V, 60 mA.
LSL = 33.0, Nominal = 36.575
30
34
32
38
40
36
42
160
120
80
40
0
Cpk = 0.77
Stdev = 1.41
-3 Std
GAIN (dB)
Figure 3. Gain @ 2 GHz, 3 V, 60 mA.
USL = 18.5, LSL = 15, Nominal = 16.6
14
16
15
18
17
19
200
160
120
80
40
0
Cpk = 1.35
Stdev = 0.4
-3 Std
+3 Std
NF (dB)
Figure 4. NF @ 2 GHz, 3 V, 60 mA.
USL = 0.9, Nominal = 0.49
0.25
0.65
0.45
0.85
1.05
160
120
80
40
0
Cpk = 1.67
Stdev = 0.073
+3 Std
Notes:
6. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values anywhere
between the upper and lower limits.
7. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on
production test equipment. Circuit losses have been de-embedded from actual measurements.
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| ATF-54143-BLK | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
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| ATF-54143-TR1G | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-TR2 | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-54143-TR1G | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-54143-TR2 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-54143-TR2G | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-541M4 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package |
| ATF-541M4-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
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