參數(shù)資料
型號(hào)： ATF-54143-BLKG
廠商： AGILENT TECHNOLOGIES INC
元件分類(lèi)： 小信號(hào)晶體管
英文描述： C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝： PLASTIC, SC-70, 4 PIN
文件頁(yè)數(shù)： 12/17頁(yè)
文件大小： 212K
代理商： ATF-54143-BLKG
4
ATF-54143 Typical Performance Curves
Figure 8. Gain vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.
Figure 10. OIP3 vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.
Figure 12. P1dB vs. Idq and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.
Figure 9. Gain vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 900 MHz.
3V
4V
Ids (mA)
GAIN
(dB)
0
100
40
20
80
60
19
18
17
16
15
14
13
12
3V
4V
Ids (mA)
OIP3
(dBm)
0
100
40
20
80
60
42
37
32
27
22
17
12
3V
4V
Idq (mA)
[1]
P1dB
(dBm)
0
100
40
20
80
60
24
22
20
18
16
14
12
3V
4V
Ids (mA)
GAIN
(dB)
0
100
40
20
80
60
25
24
23
22
21
20
19
18
Figure 11. OIP3 vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 900 MHz.
3V
4V
Ids (mA)
OIP3
(dBm)
0
100
40
20
80
60
40
35
30
25
20
15
Figure 13. P1dB vs. Idq and Vds Tuned for
Max OIP3 and Fmin at 900 MHz.
Figure 14. Gain vs. Frequency and Temp
Tuned for Max OIP3 and Fmin at 3V, 60 mA.
3V
4V
Idq (mA)
[1]
P1dB
(dBm)
0
100
40
20
80
60
23
22
21
20
19
18
17
16
15
25
°C
-40
°C
85
°C
FREQUENCY (GHz)
GAIN
(dB)
06
2
14
5
3
35
30
25
20
15
10
5
Figure 7. Fmin vs. Ids and Vds Tuned for
Max OIP3 and Min NF at 900 MHz.
3V
4V
Ids (mA)
Fmin
(dB)
0
100
40
20
80
60
0.6
0.5
0.4
0.3
0.2
0.1
0
Figure 6. Fmin vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.
3V
4V
Ids (mA)
Fmin
(dB)
0
100
40
20
80
60
0.7
0.6
0.5
0.4
0.3
0.2
Notes:
1. I
dq represents the quiescent drain current
without RF drive applied. Under low values of
Ids, the application of RF drive will cause Id to
increase substantially as P1dB is approached.
2. Fmin values at 2 GHz and higher are based on
measurements while the Fmins below 2 GHz
have been extrapolated. The Fmin values are
based on a set of 16 noise figure measure-
ments made at 16 different impedances using
an ATN NP5 test system. From these
measurements a true Fmin is calculated.
Refer to the noise parameter application
section for more information.
相關(guān)PDF資料
PDF描述
ATF-54143-TR1G C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-54143-TR2 C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-54143-TR2G C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-541M4-TR1G X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-541M4-TR2G X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-54143-TR1 功能描述:IC TRANS E-PHEMT 2GHZ SOT-343 RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類(lèi)型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱(chēng):MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
ATF-54143-TR1G 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-54143-TR2 制造商:AGILENT 制造商全稱(chēng):AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-54143-TR2G 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-541M4 制造商:AGILENT 制造商全稱(chēng):AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package
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