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| 型號(hào)： | ATF-531P8-BLKG |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| 封裝： | 2 X 2 MM, 0.75 MM HEIGHT, PLASTIC, LPCC-8 |
| 文件頁(yè)數(shù)： | 3/16頁(yè) |
| 文件大?。?/td> | 142K |
| 代理商： | ATF-531P8-BLKG |
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11
Freq
Fmin
Γopt
Rn/50
Ga
GHz
dB
Mag.
Ang.
dB
0.5
0.45
0.20
154.00
0.037
28.85
0.9
0.48
0.32
160.00
0.032
25.13
1
0.50
0.35
166.00
0.030
24.43
1.5
0.55
0.40
170.00
0.030
21.26
2
0.65
0.46
177.40
0.030
19.38
2.4
0.70
0.49
-175.10
0.032
17.90
3
0.77
0.55
-168.90
0.031
16.33
3.5
0.84
0.58
-162.60
0.037
15.23
3.9
0.90
0.62
-158.20
0.043
14.60
5
1.06
0.66
-145.80
0.085
12.66
5.8
1.20
0.69
-137.30
0.140
11.60
6
1.19
0.69
-135.40
0.150
11.38
7
1.40
0.77
-126.50
0.320
10.55
8
1.52
0.81
-117.90
0.550
9.84
9
1.75
0.82
-107.50
0.890
9.05
10
1.88
0.85
-95.60
1.530
8.29
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead.
Typical Noise Parameters, VDS = 5V, IDS = 135 mA
Figure 31. MSG/MAG & |S21|
2 (dB)
@ 5V, 135 mA.
FREQUENCY (GHz)
40
30
20
10
0
-10
0
5
10
15
20
MSG/MAG
&
|S21|
2
(dB)
S21
MAG
MSG
ATF-531P8 Typical Scattering Parameters, VDS = 5V, IDS = 135 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.805
-56.0
34.11
50.734
152.1
-39.17
0.011
62.6
0.468
-45.2
36.64
0.2
0.815
-94.0
32.03
39.967
132.6
-34.89
0.018
46.6
0.419
-79.7
33.46
0.3
0.831
-116.9
29.97
31.517
120.5
-33.56
0.021
36.3
0.387
-102.0
31.76
0.4
0.839
-131.7
28.10
25.418
112.1
-32.77
0.023
30.7
0.364
-117.9
30.43
0.5
0.844
-140.9
26.58
21.322
106.4
-32.40
0.024
27.2
0.354
-127.0
29.49
0.6
0.846
-148.3
25.20
18.207
101.8
-32.04
0.025
24.9
0.346
-135.4
28.62
0.7
0.850
-154.0
24.00
15.852
98.0
-31.70
0.026
23.3
0.342
-141.6
27.85
0.8
0.852
-158.7
22.93
14.014
94.8
-31.70
0.026
22.3
0.339
-146.5
27.32
0.9
0.855
-162.5
21.98
12.559
92.0
-31.70
0.026
21.6
0.337
-150.5
26.84
1
0.854
-165.6
21.10
11.351
89.6
-31.37
0.027
20.9
0.335
-153.9
26.24
1.5
0.855
-177.1
17.71
7.681
79.5
-31.06
0.028
21.1
0.331
-165.0
24.38
1.9
0.857
176.3
15.71
6.099
73.0
-30.46
0.030
22.3
0.331
-170.4
23.08
2
0.851
174.9
15.46
5.931
71.7
-30.17
0.031
22.3
0.336
-170.9
22.82
2.4
0.851
169.4
13.89
4.946
65.6
-29.63
0.033
23.3
0.315
-175.8
21.76
3
0.852
161.8
11.92
3.943
57.1
-29.12
0.035
24.3
0.323
178.2
19.82
4
0.857
151.1
9.35
2.935
43.9
-27.74
0.041
24.4
0.343
169.9
16.43
5
0.859
141.0
7.30
2.318
30.9
-26.56
0.047
22.8
0.367
162.1
14.19
6
0.870
131.8
5.57
1.899
18.5
-25.51
0.053
19.7
0.391
154.0
12.82
7
0.867
123.6
4.11
1.605
6.5
-24.44
0.060
16.3
0.417
146.2
11.24
8
0.877
115.6
2.80
1.381
-5.2
-23.48
0.067
11.8
0.440
137.7
10.41
9
0.881
106.7
1.82
1.233
-17.0
-22.38
0.076
6.1
0.458
129.1
9.75
10
0.885
95.6
0.75
1.090
-30.1
-21.41
0.085
-1.3
0.482
118.1
8.94
11
0.892
85.2
-0.30
0.966
-42.9
-20.72
0.092
-9.1
0.500
107.5
8.31
12
0.875
74.2
-1.33
0.858
-54.3
-20.00
0.100
-17.0
0.540
98.6
6.52
13
0.883
63.8
-2.49
0.751
-65.9
-19.66
0.104
-24.8
0.593
87.1
5.87
14
0.886
57.9
-3.58
0.662
-76.4
-19.09
0.111
-31.8
0.636
75.8
5.23
15
0.913
47.4
-4.78
0.577
-86.8
-18.71
0.116
-40.3
0.660
66.8
6.01
16
0.908
43.1
-5.81
0.512
-94.4
-18.56
0.118
-47.8
0.699
57.0
4.78
17
0.891
32.2
-6.99
0.447
-105.1
-18.49
0.119
-54.9
0.747
48.4
2.98
18
0.928
20.6
-8.64
0.370
-112.1
-18.86
0.114
-62.6
0.717
39.9
2.41
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-531P8-TR2G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-TR2G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-TR2 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-531P8-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-531P8-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF54143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-54143 | 制造商:Avago Technologies 功能描述:MOSFET RF HEMT SOT-343 |
| ATF-54143-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
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