參數(shù)資料
型號(hào)： ATF-521P8-BLK
廠商： AGILENT TECHNOLOGIES INC
元件分類： 小信號(hào)晶體管
英文描述： C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
封裝： 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8
文件頁數(shù)： 2/24頁
文件大小： 248K
代理商： ATF-521P8-BLK
10
Freq
Fmin
Γopt
Rn
Ga
GHz
dB
Mag.
Ang.
dB
0.5
0.60
0.30
130.00
2.8
20.2
1.0
0.72
0.35
150.00
2.6
18.4
2.0
0.96
0.47
-175.47
1.9
16.5
3.0
1.11
0.57
-162.03
2.1
13.8
4.0
1.44
0.62
-150.00
4.5
11.2
5.0
1.75
0.69
-136.20
10.0
9.8
6.0
1.99
0.74
-127.35
17.0
8.7
7.0
2.12
0.80
-116.83
28.5
7.5
8.0
2.36
0.69
-108.38
35.6
5.7
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead.
Typical Noise Parameters, VDS = 4.5V, IDS = 200 mA
Figure 41. MSG/MAG and |S21|
2 vs.
Frequency at 4.5V, 200 mA.
MAG
S21
FREQUENCY (GHz)
MSG/MAG
and
|S
21
|
2 (dB)
020
10
515
40.0
30.0
20.0
10.0
0.0
-10.0
-20.0
MSG
ATF-521P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 200 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.823
-89.9
34.4
52.21
135.6
-37.9
0.013
46.2
0.388
-113.0
36.0
0.2
0.873
-128.7
30.5
33.39
115.7
-35.6
0.017
32.0
0.478
-143.2
32.9
0.3
0.879
-145.5
27.6
23.90
106.3
-34.9
0.018
27.0
0.507
-156.0
31.2
0.4
0.885
-155.1
25.2
18.25
100.5
-34.7
0.018
25.8
0.518
-163.1
30.1
0.5
0.883
-161.1
23.6
15.12
96.6
-34.4
0.019
24.8
0.519
-166.7
29.0
0.6
0.897
-165.9
22.1
12.66
92.9
-34.1
0.020
24.2
0.525
-169.6
28.0
0.7
0.895
-169.5
20.8
10.95
90.5
-33.7
0.021
24.2
0.526
-172.2
27.2
0.8
0.894
-171.9
19.6
9.59
88.0
-33.6
0.021
25.3
0.528
-174.0
26.6
0.9
0.900
-174.7
18.7
8.64
86.2
-33.1
0.022
26.2
0.528
-175.6
25.9
1
0.893
-176.6
17.8
7.78
83.7
-33.1
0.022
27.6
0.529
-177.7
25.5
1.5
0.894
175.3
14.3
5.17
75.7
-32.1
0.025
32.6
0.527
177.2
23.2
2
0.889
168.5
12.0
4.00
67.8
-30.8
0.029
33.6
0.516
172.1
21.4
2.5
0.888
162.6
10.2
3.22
61.3
-29.8
0.032
35.2
0.514
168.1
18.4
3
0.892
157.0
8.6
2.69
54.5
-28.6
0.037
35.6
0.517
164.0
16.7
4
0.884
146.5
6.0
2.00
40.7
-26.8
0.046
34.4
0.526
156.0
13.5
5
0.891
137.0
4.0
1.59
28.3
-25.2
0.055
30.5
0.548
148.3
11.9
6
0.889
127.9
2.3
1.30
16.4
-24.0
0.063
26.4
0.568
141.0
10.1
7
0.902
119.6
0.9
1.11
4.8
-22.8
0.072
21.0
0.584
133.5
9.4
8
0.881
105.6
-0.9
0.90
-8.8
-21.3
0.086
13.3
0.580
124.9
6.7
9
0.891
96.0
-1.7
0.83
-20.1
-20.2
0.098
5.6
0.594
115.8
6.4
10
0.876
83.9
-2.9
0.72
-32.1
-19.3
0.108
-3.2
0.600
105.3
4.6
11
0.885
73.1
-3.6
0.66
-43.7
-18.5
0.119
-12.1
0.622
95.0
4.2
12
0.885
60.9
-4.8
0.57
-54.1
-18.0
0.126
-21.6
0.641
84.1
3.0
13
0.893
53.0
-6.3
0.48
-66.2
-17.7
0.131
-29.9
0.663
73.1
2.1
14
0.889
42.2
-7.2
0.44
-74.0
-17.2
0.138
-36.7
0.698
65.7
1.2
15
0.894
34.3
-7.8
0.41
-80.6
-16.9
0.143
-44.1
0.732
57.4
1.0
16
0.840
25.0
-8.4
0.38
-83.4
-16.2
0.154
-54.3
0.750
51.0
-0.8
17
0.719
9.1
-10.0
0.32
-90.1
-15.4
0.171
-64.8
0.815
44.5
-3.2
18
0.794
-8.1
-12.2
0.25
-102.3
-16.7
0.147
-84.1
0.655
40.4
-5.9
相關(guān)PDF資料
PDF描述
ATF-521P8-TR2G C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-521P8-TR1G C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-521P8-BLKG C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-521P8-TR2 L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-521P8-TR1 L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-521P8-BLK 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
ATF-521P8-BLKG 制造商:Avago Technologies 功能描述:
ATF-521P8-TR1 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-521P8-TR2 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF524S16M 制造商:n/a 功能描述:Inverter Semiconductor
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