參數(shù)資料
型號: ATF-511P8-BLK
元件分類: 功率晶體管
英文描述: C BAND, Si, N-CHANNEL, RF POWER, HEMFET
封裝: 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8
文件頁數(shù): 4/16頁
文件大?。?/td> 447K
代理商: ATF-511P8-BLK
12
ATF-511P8 Typical Scattering Parameters,
VDS = 3V, IDS = 200 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.95
-137.1
29.51
29.89
109.9
-36.88
0.01
25.2
0.78
-166.0
33.29
0.2
0.94
-159.0
23.89
15.65
98.7
-36.27
0.01
19.8
0.81
-174.5
30.18
0.3
0.94
-167.3
20.46
10.54
93.8
-36.20
0.01
18.0
0.82
-177.6
28.47
0.4
0.94
-172.0
18.04
7.98
90.7
-35.82
0.01
20.5
0.83
179.4
26.98
0.5
0.93
-175.3
16.10
6.38
88.7
-35.59
0.01
22.4
0.83
177.6
25.75
0.6
0.93
-176.8
15.36
5.86
85.9
-34.34
0.01
24.0
0.81
176.3
24.89
0.7
0.93
-178.7
14.14
5.09
84.2
-34.27
0.01
24.8
0.81
174.6
24.28
0.8
0.93
179.1
12.87
4.4
82.6
-34.12
0.02
27.1
0.81
173.1
23.42
0.9
0.93
177.3
11.82
3.89
80.6
-33.66
0.02
29.1
0.81
171.7
22.69
1
0.93
176.1
10.91
3.51
78.9
-33.55
0.02
29.3
0.81
170.7
22.23
1.5
0.93
169.4
7.24
2.30
71.8
-31.97
0.02
35.4
0.81
164.6
19.64
2
0.93
164.0
4.75
1.72
64.7
-30.60
0.03
38.5
0.81
158.5
16.34
2.5
0.93
159.1
2.73
1.36
58.5
-29.39
0.03
38.5
0.81
153.4
14.08
3
0.92
154.0
0.93
1.11
51.6
-28.15
0.03
37.4
0.80
147.6
11.72
4
0.93
144.8
-1.58
0.83
38.7
-26.26
0.04
33.1
0.78
135.8
9.24
5
0.92
135.2
-3.78
0.64
27.3
-24.91
0.05
27.7
0.74
125.0
6.28
6
0.93
126.0
-5.54
0.52
17.2
-24.05
0.06
22.1
0.68
115.6
4.39
7
0.91
116.6
-7.07
0.44
10.5
-23.11
0.07
17.2
0.63
110.7
1.96
8
0.91
107.4
-7.66
0.41
2.06
-22.08
0.07
12.1
0.62
106.3
1.32
9
0.90
98.4
-8.06
0.39
-5.6
-21.04
0.08
5.0
0.63
99.5
0.60
10
0.92
89.0
-8.99
0.35
-15.9
-20.23
0.09
-2.7
0.64
89.8
0.49
11
0.92
79.5
-9.12
0.35
-25.8
-19.45
0.10
-12.4
0.66
78.7
0.19
12
0.91
70.1
-9.28
0.34
-35.9
-19.08
0.11
-21.4
0.68
66.3
-0.19
13
0.91
61.9
-9.71
0.32
-39.9
-18.93
0.11
-29.2
0.69
56.4
-0.68
14
0.92
51.8
-10.04
0.31
-54.7
-18.89
0.11
-35.6
0.70
47.9
-0.40
15
0.88
44.1
-10.01
0.31
-59.8
-18.63
0.11
-40.7
0.72
39.0
-1.57
16
0.87
36.4
-10.16
0.31
-77.5
-18.83
0.11
-44.7
0.73
35.3
-1.85
17
0.83
30.1
-10.61
0.31
-87.2
-18.17
0.12
-51.2
0.74
27.7
-2.42
18
0.85
24.0
-11.96
0.25
-97.4
-17.69
0.13
-58.3
0.75
18.3
-3.71
Figure 36. MSG/MAG & |S21|
2 (dB)
@ 3V, 200 mA.
FREQUENCY (GHz)
40
30
20
10
0
-10
-20
0
5
10
15
20
MSG/MAG
&
|S21|
2
(dB)
S21
MAG
MSG
Notes:
1. S parameter is measured on a microstrip line
made on 0.025 inch thick alumina carrier. The
input reference plane is at the end of the gate
lead. The output reference plane is at the end
of the drain lead.
相關PDF資料
PDF描述
ATF-52189-BLK C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-52189-TR1 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-521P8-TR1 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-521P8-TR2 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-521P8-BLK C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
相關代理商/技術參數(shù)
參數(shù)描述
ATF-511P8-BLK 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
ATF-511P8-TR1 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
ATF-511P8-TR2 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
ATF-52189-BLK 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
ATF-52189-TR1 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: