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| 型號： | ATF-501P8-TR1 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| 封裝： | 2 x 2 MM, 0.75 MM HEIGHT,LEAD FREE, PLASTIC,LPCC-8 |
| 文件頁數(shù)： | 20/22頁 |
| 文件大?。?/td> | 786K |
| 代理商： | ATF-501P8-TR1 |
7
ATF-501P8 Typical Performance Curves (at 25°C unless specified otherwise)
Tuned for Optimum OIP3 at 4.5V 280 mA
Figure 24. OIP3 vs. Temperature and Frequency
at Optimal OIP3.
FREQUENCY (GHz)
OIP3
(dBm)
0.5
4
1
1.5
2
2.5
3
3.5
50
40
30
20
10
0
-40C
25C
85C
Figure 25. OIP3 vs. Temperature and
Frequency at Optimal P1dB.
FREQUENCY (GHz)
OIP3
(dBm)
0.5
4
1
1.5
2
2.5
3
3.5
50
40
30
20
10
0
-40C
25C
85C
Figure 26. P1dB vs. Temperature and
Frequency at Optimal OIP3.
FREQUENCY (GHz)
P1dB
(dBm)
0.5
4
1
1.5
2
2.5
3
3.5
35
30
25
20
15
-40C
25C
85C
Figure 27. P1dB vs. Temperature and
Frequency at Optimal P1dB.
FREQUENCY (GHz)
P1dB
(dBm)
0.5
4
1
1.5
2
2.5
3
3.5
35
30
25
20
15
-40C
25C
85C
Figure 28. Gain vs. Temperature and
Frequency at Optimal OIP3.
FREQUENCY (GHz)
GAIN
(dB)
0.5
4
1
1.5
2
2.5
3
3.5
20
15
10
5
0
-40C
25C
85C
Figure 29. Gain vs. Temperature and
Frequency at Optimal P1dB.
FREQUENCY (GHz)
GAIN
(dB)
0.5
4
1
1.5
2
2.5
3
3.5
25
20
15
10
5
0
-40C
25C
85C
Figure 30. PAE vs. Temperature and
Frequency at Optimal OIP3.
FREQUENCY (GHz)
PA
E(%)
0.5
4
1
1.5
2
2.5
3
3.5
60
50
40
30
20
10
0
-40C
25C
85C
Figure 31. PAE vs. Temperature and
Frequency at Optimal P1dB.
FREQUENCY (GHz)
PA
E(%)
0.5
4
1
1.5
2
2.5
3
3.5
100
80
60
40
20
0
-40C
25C
85C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-511P8-BLKG | C BAND, Si, N-CHANNEL, RF POWER, HEMFET |
| ATF-511P8-TR2G | C BAND, Si, N-CHANNEL, RF POWER, HEMFET |
| ATF-511P8-BLK | C BAND, Si, N-CHANNEL, RF POWER, HEMFET |
| ATF-511P8-TR1 | C BAND, Si, N-CHANNEL, RF POWER, HEMFET |
| ATF-511P8-TR2 | C BAND, Si, N-CHANNEL, RF POWER, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-501P8-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-511P8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Single Voltage E-pHEMT Low Noise +41.7 dBm OIP3 in LPCC |
| ATF-511P8-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-511P8-BLK | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-511P8-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
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