參數(shù)資料
型號： ATF-501P8-TR1
廠商： AGILENT TECHNOLOGIES INC
元件分類： 小信號晶體管
英文描述： S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
封裝： 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, LPCC-8
文件頁數(shù)： 16/22頁
文件大?。?/td> 184K
代理商： ATF-501P8-TR1
3
ATF-501P8 Electrical Specifications
TA = 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 280 mA unless otherwise specified.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Vgs
Operational Gate Voltage
Vds = 4.5V, Ids = 280 mA
V
0.42
0.55
0.67
Vth
Threshold Voltage
Vds = 4.5V, Ids = 32 mA
V
—
0.33
—
Idss
Saturated Drain Current
Vds = 4.5V, Vgs = 0V
A
—
5
—
Gm
Transconductance
Vds = 4.5V, Gm =
Ids/Vgs;
mmho
—
1872
—
Vgs = Vgs1 – Vgs2
Vgs1 = 0.55V, Vgs2 = 0.5V
Igss
Gate Leakage Current
Vds = 0V, Vgs = -4.5V
A
-30
-0.8
—
NF
Noise Figure[1]
f = 2 GHz
dB
—
1
—
f = 900 MHz
dB
——
—
G
Gain[1]
f = 2 GHz
dB
13.5
15
16.5
f = 900 MHz
dB
—
16.6
—
OIP3
Output 3rd Order Intercept Point[1,2]
f = 2 GHz
dBm
43
45.5
—
f = 900 MHz
dBm
—
42
—
P1dB
Output 1dB Compressed [1]
f = 2 GHz
dBm
27.5
29
—
f = 900 MHz
dBm
—
27.3
—
PAE
Power Added Efficiency[1]
f = 2 GHz
%
50
65
—
f = 900 MHz
%
—
49
—
ACLR
Adjacent Channel Leakage
Offset BW = 5 MHz
dBc
—
63.9
—
Power Ratio[1,3]
Offset BW = 10 MHz
dBc
—
64.1
—
Notes:
1. Measurements at 2 GHz obtained using production test board described in Figure 2 while measurement at 0.9GHz obtained from load pull tuner.
2. i ) 2 GHz OIP3 test condition: F1 = 2.0 GHz, F2 = 2.01 GHz and Pin = -5 dBm per tone.
ii ) 900 MHz OIP3 test condition: F1 = 900 MHz, F2 = 910 MHz and Pin = -5dBm per tone.
3. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06)
- Test Model 1
- Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128)
- Freq = 2140 MHz
- Pin = -5 dBm
- Channel Integrate Bandwidth = 3.84 MHz
4. Use proper bias, board, heatsinking and derating designs to ensure max channel temperature is not exceeded.
See absolute max ratings and application note for more details.
Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE measurements at 2 GHz. This circuit achieves a
trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.
Input
Output
50 Ohm
Transmission
Line and
Drain Bias T
(0.3 dB loss)
50 Ohm
Transmission
Line and
Drain Bias T
(0.3 dB loss)
Output
Matching
Circuit
Γ_mag=0.69
Γ_ang=-163°
(0.9 dB loss)
Input
Matching
Circuit
Γ_mag=0.79
Γ_ang=-164°
(1.1 dB loss)
DUT
相關(guān)PDF資料
PDF描述
ATF-501P8-TR1G S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-501P8-TR2G S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-501P8-TR2 S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-501P8-BLK S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-501P8-TR2 L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-501P8-TR2 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-511P8 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Single Voltage E-pHEMT Low Noise +41.7 dBm OIP3 in LPCC
ATF-511P8-BLK 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-511P8-BLK 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
ATF-511P8-TR1 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
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