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參數(shù)資料
| 型號(hào)： | ATF-50189 |
| 元件分類： | 放大器 |
| 英文描述： | 0 MHz - 2400 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 文件頁(yè)數(shù)： | 9/14頁(yè) |
| 文件大?。?/td> | 667K |
| 代理商： | ATF-50189 |
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Figure 4. Positions of PCB trace cuts and distance between heatsink screws
11
mm
Cut trace for R10
Cut trace/s for Ids fine tune
Just like bipolar transistors, which exhibit a wide variation
in HFE within a particular part number, the ATF-50189’s
forward transconductance, gm, can vary from unit to unit.
The resistor network, R3~R7, on the demoboard allows
fine-tuning the gate bias, Vg, to cover the range of gm
variation. The individual PCB traces connecting to R3~R7
is cut one at a time until the demoboard draws the target
current range of 315 ± 15 mA. This results in Vds = 4.5 volt
and Ids = 280mA at the device-under-test, Q1.
The PCB trace leading to the positive supply needs to
be cut to fit the resistor, R10. By connecting a voltmeter
across R10, the current drawn by the demoboard can be
monitored.
Table 1. Cut on R3~R7 traces versus initial demoboard current
Initial Idd (ma)
Cut the trace/s connected to the resistor/s
Min
Max
R3
R4
R5
R6
R7
250
259
X
260
269
X
270
279
X
280
289
X
290
299
X
300
309
Two 3mm holes are provided for mounting a heat sink to
the ground plane on the opposite side of the demoboard.
Multiple via-holes around Q1, conduct heat to the ground
planeandheatsinkinterface.Toreducetheinterface’sther-
mal resistance, apply a thin layer of silicon grease thermal
compound and tighten mounting screws with the correct
torquerecommendedbytheheatsinkmanufacturer(usu-
ally slightly beyond finger tight).
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-50189-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-50189-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-50189-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF501P8 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package |
| ATF-501P8 | 制造商:Avago Technologies 功能描述:MOSFET RF POWERPAK |
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