參數(shù)資料
型號： ATF-50189-TR1G
廠商： AGILENT TECHNOLOGIES INC
元件分類： 小信號晶體管
英文描述： C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝： SOT-89, 3 PIN
文件頁數(shù)： 3/21頁
文件大?。?/td> 165K
代理商： ATF-50189-TR1G
11
Notes:
1. S parameter is measured on a microstrip line
made on 0.025 inch thick alumina carrier. The
input reference plane is at the end of the gate
lead. The output reference plane is at the end
of the drain lead.
ATF-50189 Typical Scattering Parameters at 25
°C, VDS = 4.5V, IDS = 280 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.923
-133.2
31.0
35.531
110.9
-37.7
0.013
31.7
0.692
-163.7
34.4
0.2
0.919
-158.7
25.6
19.023
97.1
-37.1
0.014
25.2
0.738
-173.2
31.3
0.3
0.919
-169.4
22.2
12.872
90.4
-36.5
0.015
24.9
0.749
-177.6
29.3
0.4
0.917
-176.1
19.7
9.705
85.7
-35.9
0.016
26.3
0.752
179.3
27.8
0.5
0.916
178.5
17.7
7.687
84.4
-35.4
0.017
30.4
0.756
175.7
26.6
0.6
0.916
174.5
16.2
6.438
81.7
-34.9
0.018
32.6
0.755
173.5
25.5
0.7
0.917
170.9
14.9
5.582
79.2
-34.4
0.019
34.5
0.755
171.4
24.7
0.8
0.918
167.5
13.9
4.939
76.5
-33.6
0.021
35.9
0.753
169.4
23.7
0.9
0.920
164.1
12.9
4.433
73.8
-33.2
0.022
36.8
0.755
167.5
23.0
1.0
0.921
161.0
12.1
4.026
70.9
-32.4
0.024
37.1
0.753
165.6
22.2
1.1
0.922
159.6
11.7
3.853
69.5
-32.0
0.025
37.1
0.753
164.7
21.9
1.2
0.922
158.1
11.3
3.679
68.1
-32.0
0.025
37.1
0.753
163.7
21.7
1.3
0.922
155.4
10.6
3.378
65.2
-31.4
0.027
36.7
0.751
162.0
21.0
1.4
0.919
152.6
9.9
3.127
62.3
-31.1
0.028
36.3
0.753
160.2
20.3
1.5
0.918
150.2
9.3
2.910
59.6
-30.5
0.030
35.8
0.753
158.4
19.2
1.6
0.920
147.5
8.7
2.717
56.7
-30.2
0.031
35.0
0.753
156.7
18.5
1.7
0.919
144.6
8.1
2.547
53.9
-29.6
0.033
34.1
0.753
154.9
17.8
1.8
0.920
142.0
7.6
2.392
51.2
-29.4
0.034
33.2
0.753
153.3
17.2
1.9
0.918
139.6
7.0
2.251
48.6
-29.1
0.035
32.1
0.752
151.7
16.5
2.0
0.919
137.1
6.5
2.123
45.9
-28.6
0.037
31.0
0.752
150.1
16.0
2.1
0.917
134.6
6.1
2.009
43.3
-28.4
0.038
29.7
0.752
148.3
15.4
2.2
0.918
132.0
5.6
1.908
40.6
-28.2
0.039
28.6
0.752
146.8
15.0
2.3
0.915
129.8
5.1
1.800
37.9
-28.0
0.040
27.4
0.755
145.2
14.4
2.4
0.912
127.1
4.7
1.721
35.6
-27.7
0.041
26.0
0.750
143.9
13.9
2.5
0.908
124.9
4.3
1.647
33.4
-27.3
0.043
25.0
0.768
142.3
13.4
3
0.908
112.7
2.3
1.304
21.1
-26.6
0.047
18.3
0.766
135.5
11.5
3.5
0.912
99.5
0.5
1.062
11.3
-26.0
0.050
12.6
0.773
131.8
10.0
4
0.923
92.6
-0.7
0.921
1.5
-25.8
0.051
7.1
0.779
123.3
9.4
5
0.922
78.2
-3.5
0.669
-19.8
-25.2
0.055
-5.3
0.793
102.9
7.0
6
0.921
61.3
-5.8
0.515
-41.5
-25.7
0.052
-22.4
0.806
84.7
5.2
7
0.921
41.2
-8.2
0.389
-59.6
-26.0
0.050
-39.5
0.809
69.9
3.2
8
0.922
24.3
-10.2
0.308
-79.9
-26.7
0.046
-55.9
0.844
54.6
2.1
9
0.923
11.8
-12.4
0.239
-100.5
-28.4
0.038
-73.5
0.882
37.0
1.4
10
0.922
10.8
-14.6
0.187
-109.4
-31.1
0.028
-81.6
0.896
27.1
0.1
11
0.921
0.3
-16.0
0.158
-124.9
-34.4
0.019
-108.3
0.872
20.3
-1.8
12
0.924
-8.0
-17.7
0.131
-138.0
-46.0
0.005
-147.3
0.916
7.0
-1.3
13
0.923
-12.1
-19.2
0.110
-153.4
-40.0
0.010
71.0
0.877
-1.1
-4.4
14
0.922
-20.6
-21.0
0.089
-168.9
-37.1
0.014
30.2
0.882
-7.5
-6.3
15
0.925
-23.6
-21.4
0.085
177.8
-39.2
0.011
-4.9
0.865
-19.2
-7.2
16
0.925
-23.1
-21.1
0.088
165.9
-37.7
0.013
-8.8
0.864
-26.2
-6.9
17
0.924
-24.3
-18.9
0.114
155.2
-41.9
0.008
-173.5
0.856
-33.6
-4.7
18
0.924
-32.5
-17.1
0.140
133.4
-35.4
0.017
161.7
0.835
-42.5
-3.2
Figure 31. MSG/MAG & |S21|
2 vs Frequency
at 4.5V/280 mA.
FREQUENCY (GHz)
MSG/MAG
&
|S21|
2
(dB)
018
2
4
6
8
10
12
14
16
40
30
20
10
0
-10
-20
-30
MSG
MAG
S21
相關PDF資料
PDF描述
ATF-501P8-BLKG S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-501P8-TR1 S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-501P8-TR1G S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-501P8-TR2G S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-501P8-TR2 S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
相關代理商/技術參數(shù)
參數(shù)描述
ATF-50189-TR2 功能描述:射頻GaAs晶體管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
ATF501P8 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package
ATF-501P8 制造商:Avago Technologies 功能描述:MOSFET RF POWERPAK
ATF-501P8-BLK 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
ATF-501P8-BLK 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
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