參數(shù)資料
型號(hào)： ATF-50189-BLKG
廠商： AGILENT TECHNOLOGIES INC
元件分類： 小信號(hào)晶體管
英文描述： C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝： SOT-89, 3 PIN
文件頁數(shù)： 12/21頁
文件大?。?/td> 165K
代理商： ATF-50189-BLKG
2
ATF-50189 Absolute Maximum Ratings[1]
Absolute
Symbol
Parameter
Units
Maximum
V
DS
Drain–Source Voltage[2]
V7
V
GS
Gate–Source Voltage[2]
V
-5 to 0.8
V
GD
Gate Drain Voltage[2]
V
-5 to 1
I
DS
Drain Current[2]
A1
I
GS
Gate Current
mA
12
P
diss
Total Power Dissipation[3]
W
2.25
P
in
RF Input Power
dBm
30
T
CH
Channel Temperature
°C
150
T
STG
Storage Temperature
°C
-65 to 150
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Assumes DC quiescent conditions.
3. Board (package belly) temperature TB is 25°C.
Derate 35 mW/
°C for T
B > 85°C.
4. Channel-to-board thermal resistance
measured using 150
°C Liquid Crystal
Measurement method.
ATF-50189 Electrical Specifications
TA = 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 280 mA unless otherwise specified.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Vgs
Operational Gate Voltage
Vds = 4.5V, Ids = 280 mA
V
0.37
0.53
0.72
Vth
Threshold Voltage
Vds = 4.5V, Ids = 32 mA
V
—
0.38
—
Idss
Saturated Drain Current
Vds = 4.5V, Vgs = 0V
A
—
4.1
—
Gm
Transconductance
Vds = 4.5V, Gm =
Ids/Vgs;
mmho
175
2294
—
Vgs = Vgs1 – Vgs2
Vgs1 = 0.55V, Vgs2 = 0.5V
Igss
Gate Leakage Current
Vds = 0V, Vgs = -4.5V
A
—
13.8
60
NF
Noise Figure[1]
f = 2 GHz
dB
—
1.1
—
f = 900 MHz
dB
—
1.0
—
G
Gain [1]
f = 2 GHz
dB
14
15.5
17
f = 900 MHz
dB
—
21.5
—
OIP3
Output 3rd Order Intercept Point [1,2]
f = 2 GHz
dBm
43
45
—
f = 900 MHz
dBm
—
44
—
P1dB
Output Power at 1dB Compression Point [1]
f = 2 GHz
dBm
27
29
—
f = 900 MHz
dBm
—
28.5
—
PAE
Power Added Efficiency[1] at P1dB
f = 2 GHz
%
45
62
—
f = 900 MHz
%
—
49
—
ACLR
Adjacent Channel Leakage
Offset BW = 5 MHz
dBc
—
60.0
—
Power Ratio[1,3]
Offset BW = 10 MHz
dBc
—
67.8
—
Notes:
1. Measurements at 2 GHz obtained using production test board described in Figure 1 while measurement at 900 MHz obtained from double stub tuners.
2. i ) 2 GHz OIP3 test condition: F1 = 2 GHz, F2 = 2.005 GHz and Pin = -5 dBm per tone.
ii ) 900 MHz OIP3 test condition: F1 = 900 MHz, F2 = 905 MHz and Pin = -5 dBm per tone.
3. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06)
- Test Model 1
- Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128)
- Freq = 2140 MHz
- Pin = -5 dBm
- Channel Integrate Bandwidth = 3.84 MHz
Thermal Resistance[2,4]
θ
ch_b = 29°C/W
相關(guān)PDF資料
PDF描述
ATF-50189-TR1G C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
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ATF-501P8-TR1G S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-50189-TR1 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-50189-TR2 功能描述:射頻GaAs晶體管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF501P8 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package
ATF-501P8 制造商:Avago Technologies 功能描述:MOSFET RF POWERPAK
ATF-501P8-BLK 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
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