參數(shù)資料
型號(hào)： ATF-38143-TR2G
元件分類： 小信號(hào)晶體管
英文描述： X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝： LEAD FREE, PLASTIC, SC-70, 4 PIN
文件頁數(shù)： 13/13頁
文件大?。?/td> 452K
代理商： ATF-38143-TR2G
9
Noise Parameter Applications Information
Fmin values at 2GHz and higher are based on
measurementswhiletheFminsbelow2GHzhavebeen
extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different
impedancesusinganATNNP5testsystem.Fromthese
measurements,atrueFminiscalculated.Fminrepresents
thetrueminimumnoisefigureofthedevicewhenthe
deviceispresentedwithanimpedancematchingnetwork
thattransformsthesourceimpedance,typically50Ω,to
animpedancerepresentedbythereflectioncoefficient
Γo.Thedesignermustdesignamatchingnetworkthat
will present Γo to the device with minimal associated
circuitlosses.Thenoisefigureofthecompletedamplifier
isequaltothenoisefigureofthedeviceplusthelosses
of the matching network preceding the device. The
noisefigureofthedeviceisequaltoFminonlywhenthe
deviceispresentedwithΓo.Ifthereflectioncoefficient
ofthematchingnetworkisotherthanΓo,thenthenoise
figureofthedevicewillbegreaterthanFminbasedonthe
followingequation.
NF=Fmin+4Rn|Γs–Γo|2
Zo(|1+Γo|2)(1–Γs|2)
Where Rn/Zo is the normalized noise resistance, Γo is
theoptimumreflectioncoefficientrequiredtoproduce
Fmin and Γs is the reflection coefficient of the source
impedanceactuallypresentedtothedevice.Thelosses
of the matching networks are non-zero and they will
also add to the noise figure of the device creating a
higheramplifiernoisefigure.Thelossesofthematching
networks are related to the Q of the components and
associatedprintedcircuitboardloss.Γoistypicallyfairly
lowathigherfrequenciesandincreasesasfrequencyis
lowered.Largergatewidthdeviceswilltypicallyhavea
lowerΓoascomparedtonarrowergatewidthdevices.
Typically for FETs, the higher Γo usually infers that an
impedance much higher than 50Ω is required for the
device to produce Fmin. At VHF frequencies and even
lowerLBandfrequencies,therequiredimpedancecanbe
inthevicinityofseveralthousandohms.Matchingtosuch
ahighimpedancerequiresveryhi-Qcomponentsinorder
to minimize circuit losses. As an example at 900 MHz,
when air-wound coils (Q>100) are used for matching
networks,thelosscanstillbeupto0.25dBwhichwilladd
directlytothenoisefigureofthedevice.Usingmuilti-layer
molded inductors with Qs in the 30 to 50 range results
inadditionallossovertheair-woundcoil.Lossesashigh
as0.5dBorgreateraddtothetypical0.15dBFminofthe
devicecreatinganamplifiernoisefigureofnearly0.65dB.
Adiscussionconcerningcalculatedandmeasuredcircuit
lossesandtheireffectonamplifiernoisefigureiscovered
inAvagoApplication1085.
相關(guān)PDF資料
PDF描述
ATF-38143-BLKG X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-38143-TR1G X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-50189-BLK C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-50189-TR1 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-50189-TR1 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
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