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參數(shù)資料
| 型號(hào)： | ATF-38143-TR2 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | PLASTIC, SC-70, 4 PIN |
| 文件頁數(shù)： | 7/12頁 |
| 文件大小： | 540K |
| 代理商： | ATF-38143-TR2 |
4
PRELIMINARY DATA
This preliminary data is provided to assist you in the evaluation of product(s) currently under development and targeted for market release
shortly. Until Hewlett-Packard releases this product for general sales, HP reserves the right to alter prices, specifications, features,
capabilities, functions, release dates, and remove availability of the product(s) at any time.
ATF-38143 Typical Performance Curves
Figure 7. OIP3 and P1dB vs Id @ 2V, 900MHz
0
5
10
15
20
25
30
0
10
20
30
40
50
60
Current, Ids (mA)
OIP3,
P1dB
(dBm)
OIP3
P1dB
Figure 9. Noise Figure vs Id @ 2V, 900MHz
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
10
20
30
40
50
60
Current, Ids (mA)
Noise
Figure
(dB)
Figure 11. Associated Gain vs Id @ 2V,
900MHz
15
16
17
18
19
20
21
22
0
10
20
30
40
50
60
Current, Ids (mA)
Associated
Gain
(dB)
Figure 6. OIP3 and P1dB vs Id @ 2V, 2GHz
0
5
10
15
20
25
30
0
10
20
30
40
50
60
Current, Ids (mA)
OIP3,
P1dB
(dBm)
P1dB
OIP3
Figure 8. Noise Figure vs Id @ 2V, 2GHz
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
10
20
30
40
50
60
Current, Ids (mA)
Noise
Figure
(dB)
Figure 10. Associated Gain vs Id @ 2V, 2GHz
15
16
17
18
19
20
21
22
0
10
20
30
40
50
60
Current, Ids (mA)
Associated
Gain
(dB)
Notes:
1.
Measurements made on fixed tuned production test board that was tuned for optimum gain match with reasonable
noise figure at 2V, 10mA bias. This circuit represents a trade-off between an optimal noise match, maximum gain
match, and a realizable match based on production test board requirements. Circuit losses have been de-embedded
from actual measurements.
2.
P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive
applied. As P1dB is approached, the drain current may increase or decrease depending on frequency and dc bias
point. At lower values of IDSQ the device is running closer to class B as power output approaches P1 dB. This results
in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant
current source as is typically done with active biasing.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-38143-BLK | L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-TR2G | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-BLKG | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-TR1G | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-50189-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-38143-TR2G | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF4 | 功能描述:TERM BLOCK DIN RAIL 8MM GRAY RoHS:是 類別:連接器，互連式 >> 接線座 - Din 軌道，通道 系列:ATF 標(biāo)準(zhǔn)包裝:1 系列:CLIPLINE UK 類型:斷連 斷開類型:保險(xiǎn)絲，桿 位置數(shù):3 級(jí)別數(shù)目:1 端子 - 寬度:18.0mm 端接類型:螺釘 電流 - IEC:32A 電壓 - IEC:690V 電流 - UL:30A 電壓 - UL:600V 線規(guī)或范圍 - AWG:3-18 AWG 線規(guī)或范圍 - mm²:1.5-25mm² 特點(diǎn):- 顏色:黑 保險(xiǎn)絲類型:小型，10.3mm x 38mm 材料 - 絕緣體:聚酰胺（PA），尼龍 材料可燃性額定值:UL94 V-0 剝線長(zhǎng)度:12mm 其它名稱:UK 10.3-HESI N 3POLUK10.3-HESIN3POL |
| ATF-44101 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-8 GHz Medium Power Gallium Arsenide FET |
| ATF-45101 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-8 GHz Medium Power Gallium Arsenide FET |
| ATF-45171 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-8 GHz Medium Power Gallium Arsenide FET |
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