參數(shù)資料
型號(hào)： ATF-38143-TR1G
元件分類(lèi)： 小信號(hào)晶體管
英文描述： X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝： LEAD FREE, PLASTIC, SC-70, 4 PIN
文件頁(yè)數(shù)： 13/13頁(yè)
文件大?。?/td> 452K
代理商： ATF-38143-TR1G
9
Noise Parameter Applications Information
Fmin values at 2GHz and higher are based on
measurementswhiletheFminsbelow2GHzhavebeen
extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different
impedancesusinganATNNP5testsystem.Fromthese
measurements,atrueFminiscalculated.Fminrepresents
thetrueminimumnoisefigureofthedevicewhenthe
deviceispresentedwithanimpedancematchingnetwork
thattransformsthesourceimpedance,typically50Ω,to
animpedancerepresentedbythereflectioncoefficient
Γo.Thedesignermustdesignamatchingnetworkthat
will present Γo to the device with minimal associated
circuitlosses.Thenoisefigureofthecompletedamplifier
isequaltothenoisefigureofthedeviceplusthelosses
of the matching network preceding the device. The
noisefigureofthedeviceisequaltoFminonlywhenthe
deviceispresentedwithΓo.Ifthereflectioncoefficient
ofthematchingnetworkisotherthanΓo,thenthenoise
figureofthedevicewillbegreaterthanFminbasedonthe
followingequation.
NF=Fmin+4Rn|Γs–Γo|2
Zo(|1+Γo|2)(1–Γs|2)
Where Rn/Zo is the normalized noise resistance, Γo is
theoptimumreflectioncoefficientrequiredtoproduce
Fmin and Γs is the reflection coefficient of the source
impedanceactuallypresentedtothedevice.Thelosses
of the matching networks are non-zero and they will
also add to the noise figure of the device creating a
higheramplifiernoisefigure.Thelossesofthematching
networks are related to the Q of the components and
associatedprintedcircuitboardloss.Γoistypicallyfairly
lowathigherfrequenciesandincreasesasfrequencyis
lowered.Largergatewidthdeviceswilltypicallyhavea
lowerΓoascomparedtonarrowergatewidthdevices.
Typically for FETs, the higher Γo usually infers that an
impedance much higher than 50Ω is required for the
device to produce Fmin. At VHF frequencies and even
lowerLBandfrequencies,therequiredimpedancecanbe
inthevicinityofseveralthousandohms.Matchingtosuch
ahighimpedancerequiresveryhi-Qcomponentsinorder
to minimize circuit losses. As an example at 900 MHz,
when air-wound coils (Q>100) are used for matching
networks,thelosscanstillbeupto0.25dBwhichwilladd
directlytothenoisefigureofthedevice.Usingmuilti-layer
molded inductors with Qs in the 30 to 50 range results
inadditionallossovertheair-woundcoil.Lossesashigh
as0.5dBorgreateraddtothetypical0.15dBFminofthe
devicecreatinganamplifiernoisefigureofnearly0.65dB.
Adiscussionconcerningcalculatedandmeasuredcircuit
lossesandtheireffectonamplifiernoisefigureiscovered
inAvagoApplication1085.
相關(guān)PDF資料
PDF描述
ATF-50189-BLK C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-50189-TR1 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-50189-TR1 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-50189-BLK C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-50189-BLKG C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-38143-TR2 制造商:Avago Technologies 功能描述:TRANSISTOR,HEMT,N-CHAN,4.5V V(BR)DSS,90mA I(DSS),SOT-343R
ATF-38143-TR2G 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF4 功能描述:TERM BLOCK DIN RAIL 8MM GRAY RoHS:是 類(lèi)別:連接器，互連式 >> 接線座 - Din 軌道，通道 系列:ATF 標(biāo)準(zhǔn)包裝:1 系列:CLIPLINE UK 類(lèi)型:斷連 斷開(kāi)類(lèi)型:保險(xiǎn)絲，桿 位置數(shù):3 級(jí)別數(shù)目:1 端子 - 寬度:18.0mm 端接類(lèi)型:螺釘 電流 - IEC:32A 電壓 - IEC:690V 電流 - UL:30A 電壓 - UL:600V 線規(guī)或范圍 - AWG:3-18 AWG 線規(guī)或范圍 - mm²:1.5-25mm² 特點(diǎn):- 顏色:黑 保險(xiǎn)絲類(lèi)型:小型，10.3mm x 38mm 材料 - 絕緣體:聚酰胺（PA），尼龍 材料可燃性額定值:UL94 V-0 剝線長(zhǎng)度:12mm 其它名稱(chēng):UK 10.3-HESI N 3POLUK10.3-HESIN3POL
ATF-44101 制造商:AGILENT 制造商全稱(chēng):AGILENT 功能描述:2-8 GHz Medium Power Gallium Arsenide FET
ATF-45101 制造商:AGILENT 制造商全稱(chēng):AGILENT 功能描述:2-8 GHz Medium Power Gallium Arsenide FET
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