參數(shù)資料
型號(hào)： ATF-38143-TR1
元件分類： 小信號(hào)晶體管
英文描述： X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝： PLASTIC, SC-70, 4 PIN
文件頁(yè)數(shù)： 7/13頁(yè)
文件大小： 126K
代理商： ATF-38143-TR1
3
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measure-
ments. This circuit represents a trade-off between an optimal noise match and a realizable match based on production test
board requirements. Circuit losses have been de-embedded from actual measurements.
Input
50 Ohm
Transmission Line
(0.5 dB loss)
50 Ohm
Transmission Line
(0.5 dB loss)
Input
Matching Circuit
Γmag = 0.380
Γang = 58.2°
(0.46 dB loss)
DUT
Output
Matching Circuit
Γmag = 0.336
Γang = 34.5°
(0.46 dB loss)
Output
ATF-38143 Electrical Specifications
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Parameters and Test Conditions
Units
Min. Typ.[2]
Max.
Idss[1]
Saturated Drain Current
VDS = 1.5 V, VGS = 0 V
mA
90
118
145
VP[1]
Pinchoff Voltage
VDS = 1.5 V, IDS = 10% of Idss
V
-0.65
-0.5
- 0.35
Id
Quiescent Bias Current
VGS = -0.54 V, VDS = 2 V
mA
—
10
—
gm[1]
Transconductance
VDS = 1.5 V, gm = Idss/VP mmho 180
230
—
IGDO
Gate to Drain Leakage Current
VGD = -5 V
A
500
Igss
Gate Leakage Current
VGD = VGS = -4 V
A
—
30
300
f = 2 GHz
VDS = 2 V, IDS = 5 mA
dB
0.6
VDS = 2 V, IDS = 10 mA
0.4
0.85
NF
Noise Figure
VDS = 2 V, IDS = 20 mA
0.3
f = 900 MHz
VDS = 2 V, IDS = 5 mA
dB
0.6
VDS = 2 V, IDS = 10 mA
0.4
VDS = 2 V, IDS = 20 mA
0.3
f = 2 GHz
VDS = 2 V, IDS = 5 mA
dB
15.3
VDS = 2 V, IDS = 10 mA
15
16.0
18
Ga
Associated Gain[3]
VDS = 2 V, IDS = 20 mA
17.0
f = 900 MHz
VDS = 2 V, IDS = 5 mA
dB
17.0
VDS = 2 V, IDS = 10 mA
19.0
VDS = 2 V, IDS = 20 mA
20.5
Output 3rd Order
f = 2 GHz
VDS = 2 V, IDS = 10 mA
dBm
18.5
22.0
OIP3
Intercept Point[3]
f = 900 MHz
VDS = 2 V, IDS = 10 mA
dBm
22.0
Input 3rd Order
f = 2 GHz
VDS = 2 V, IDS = 10 mA
dBm
6.0
IIP3
Intercept Point[3]
f = 900 MHz
VDS = 2 V, IDS = 10 mA
dBm
3.0
1 dB Compressed
f = 2 GHz
VDS = 2 V, IDS = 10 mA
dBm
12.0
P1dB
Compressed Power[3]
f = 900 MHz
VDS = 2 V, IDS = 10 mA
dBm
12.0
Notes:
1. Guaranteed at wafer probe level.
2. Typical value determined from a sample size of 450 parts from 6 wafers.
3. Measurements obtained using production test board described in Figure 5.
相關(guān)PDF資料
PDF描述
ATF-38143-BLK X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-38143-TR2 X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-38143-TR1 L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-38143-TR2 L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-38143-BLK L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-38143-TR1G 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-38143-TR2 制造商:Avago Technologies 功能描述:TRANSISTOR,HEMT,N-CHAN,4.5V V(BR)DSS,90mA I(DSS),SOT-343R
ATF-38143-TR2G 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF4 功能描述:TERM BLOCK DIN RAIL 8MM GRAY RoHS:是 類別:連接器，互連式 >> 接線座 - Din 軌道，通道 系列:ATF 標(biāo)準(zhǔn)包裝:1 系列:CLIPLINE UK 類型:斷連 斷開(kāi)類型:保險(xiǎn)絲，桿 位置數(shù):3 級(jí)別數(shù)目:1 端子 - 寬度:18.0mm 端接類型:螺釘 電流 - IEC:32A 電壓 - IEC:690V 電流 - UL:30A 電壓 - UL:600V 線規(guī)或范圍 - AWG:3-18 AWG 線規(guī)或范圍 - mm²:1.5-25mm² 特點(diǎn):- 顏色:黑 保險(xiǎn)絲類型:小型，10.3mm x 38mm 材料 - 絕緣體:聚酰胺（PA），尼龍 材料可燃性額定值:UL94 V-0 剝線長(zhǎng)度:12mm 其它名稱:UK 10.3-HESI N 3POLUK10.3-HESIN3POL
ATF-44101 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-8 GHz Medium Power Gallium Arsenide FET
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