參數(shù)資料
型號(hào): ATF-36163-BLK
元件分類(lèi): 小信號(hào)晶體管
英文描述: KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝: PLASTIC, SC-70, 6 PIN
文件頁(yè)數(shù): 10/11頁(yè)
文件大小: 110K
代理商: ATF-36163-BLK
8
Figure 9. Smith Chart with Noise Figure and Available
Gain Circles at 12 GHz, VDS = 1.5 V, ID = 10 mA.
11.5 dB
1.9 dB
1.4 dB
1.3 dB
1.2 dB
1.1 dB
10.5 dB
9.5 dB
Phase Reference Planes
The positions of the reference
planes used to measure S-
Parameters and to specify
Γ
opt for
the Noise Parameters are shown
in Figure 10. As seen in the
illustration, the reference planes
are located at the extremities of
the package leads.
REFERENCE
PLANES
TEST CIRCUIT
Figure 10. Reference Planes.
SOT-363 PCB Layout
A PCB pad layout for the minia-
ture SOT-363 (SC-70) package
used by the ATF-36163 is shown
in Figure 11 (dimensions are in
inches). This layout provides
ample allowance for package
placement by automated
assembly equipment. The layout
is shown with a nominal SOT-363
package footprint superimposed
on the PCB pads.
0.026
0.079
0.018
0.039
Figure 11. Recommended PCB Pad
Layout for Avago’s SC70 6L/SOT-363
Products (Dimensions in Inches).
相關(guān)PDF資料
PDF描述
ATF-38143-TR1 X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-38143-TR1G X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-38143-TR2 X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-38143-BLKG X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-38143-BLK X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-36163-BLKG 功能描述:射頻GaAs晶體管 Transistor GaAs High Frequency RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-36163-BLKG 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
ATF-36163-G 制造商:Avago Technologies 功能描述:Transistor,RF,PHEMT,9,5dB GA,ATF-36163
ATF-36163-TR1 制造商:AGILENT 制造商全稱(chēng):AGILENT 功能描述:1.5-18 GHz Surface Mount Pseudomorphic HEMT
ATF-36163-TR1G 功能描述:射頻GaAs晶體管 Transistor GaAs High Frequency RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: