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參數(shù)資料
| 型號(hào)： | ATF-35143-TR2G |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件頁(yè)數(shù)： | 13/19頁(yè) |
| 文件大?。?/td> | 608K |
| 代理商： | ATF-35143-TR2G |
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3
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements.
This circuit represents a trade-off between an optimal noise match and a realizable match based on production test requirements.
Circuit losses have been de-embedded from actual measurements.
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.5 dB loss)
Input
Matching Circuit
Γ_mag = 0.66
Γ_ang = 5°
(0.4 dB loss)
DUT
50 Ohm
Transmission
Line Including
Drain Bias T
(0.5 dB loss)
Output
ATF-35143 Electrical Specifications
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Parameters and Test Conditions
Units
Min.
Typ.[2]
Max.
Idss[1]
Saturated Drain Current
VDS = 1.5 V, VGS = 0 V
mA
40
65
80
VP[1]
Pinchoff Voltage
VDS = 1.5 V, IDS = 10% of Idss
V
-0.65
-0.5
-0.35
Id
Quiescent Bias Current
VGS = 0.45 V, VDS = 2 V
mA
—
15
—
gm[1]
Transconductance
VDS = 1.5 V, gm = Idss/VP
mmho
90
120
—
IGDO
Gate to Drain Leakage Current
VGD = 5 V
A
250
Igss
Gate Leakage Current
VGD = VGS = -4 V
A
—
10
150
f = 2 GHz
VDS = 2 V, IDS = 15 mA
dB
0.4
0.7
NF
Noise Figure[3]
VDS = 2 V, IDS = 5 mA
0.5
0.9
f = 900 MHz
VDS = 2 V, IDS = 15 mA
dB
0.3
VDS = 2 V, IDS = 5 mA
0.4
f = 2 GHz
VDS = 2 V, IDS = 15 mA
dB
16.5
18
19.5
Ga
Associated Gain[3]
VDS = 2 V, IDS = 5 mA
14
16
18
f = 900 MHz
VDS = 2 V, IDS = 15 mA
dB
20
VDS = 2 V, IDS = 5 mA
18
Output 3rd Order
f = 2 GHz
VDS = 2 V, IDS = 15 mA
dBm
19
21
OIP3
Intercept Point[4, 5]
VDS = 2 V, IDS = 5 mA
14
f = 900 MHz
VDS = 2 V, IDS = 15 mA
dBm
19
VDS = 2 V, IDS = 5 mA
14
1 dB Compressed
f = 2 GHz
VDS = 2 V, IDSQ = 15 mA
dBm
10
P1dB
Intercept Point[4]
VDS = 2 V, IDSQ = 5 mA
8
f = 900 MHz
VDS = 2 V, IDSQ = 15 mA
dBm
9
VDS = 2 V, IDSQ = 5 mA
9
Notes:
1. Guaranteed at wafer probe level
2. Typical value determined from a sample size of 450 parts from 9 wafers.
3. 2V 5 mA min/max data guaranteed via the 2V 15 mA production test.
4. Measurements obtained using production test board described in Figure 5.
5. Pout = -10 dBm per tone
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-35143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
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| ATF36077 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-18 GHz Ultra Low Noise Pseudomorphic HEMT |
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