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參數(shù)資料
| 型號(hào)： | ATF-35143-TR2G |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件頁(yè)數(shù)： | 15/19頁(yè) |
| 文件大?。?/td> | 170K |
| 代理商： | ATF-35143-TR2G |
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5
ATF-35143 Typical Performance Curves, continued
Notes:
1. Measurements made on a fixed tuned test fixture that was tuned for noise figure at 2 V 15mA bias. This circuit represents a trade-off
between optimal noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have
been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of Idsq the device is
running closer to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when
compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 4 V
and IDSQ = 5 mA, Id increases to 30 mA as a P1dB of +15 dBm is approached.
FREQUENCY (GHz)
Figure 12. Fmin vs. Frequency and
Current at 2 V.
F
min
(dB)
010
1.50
1.25
1.00
0.75
0.50
0.25
0
4
28
6
5 mA
15 mA
30 mA
FREQUENCY (GHz)
Figure 13. Associated Gain vs.
Frequency and Current at 2 V.
Ga
(dB)
010
25
20
15
10
5
4
28
6
5 mA
15 mA
30 mA
FREQUENCY (GHz)
Figure 14. Fmin and Ga vs. Frequency
and Temperature, VDS= 2 V, IDS= 15 mA.
G
a
(dB)
08
24
6
25
°C
-40
°C
85
°C
22
20
18
16
14
12
IDS (mA)
Figure 16. OIP3, P1dB, NF and Gain vs.
Bias[1] (Active Bias, 2 V, 3.9 GHz).
OIP3,
P
1dB
(dBm),
Gain
(dB)
080
20
40
60
P1dB
OIP3
Gain
NF
25
20
15
10
5
0
NF
(dB)
2.5
2
1.5
1
0.5
0
NF
(dB)
1.0
0.8
0.6
0.4
0.2
0
IDS (mA)
Figure 17. OIP3, P1dB, NF and Gain vs.
Bias[1] (Active Bias, 2 V, 5.8 GHz).
OIP3,
P
1dB
(dBm),
Gain
(dB)
080
20
40
60
P1dB
OIP3
Gain
NF
25
20
15
10
5
0
-5
NF
(dB)
3
2.5
2
1.5
1
0.5
0
FREQUENCY (GHz)
Figure 15. OIP3 and P1dB vs. Frequency
and Temperature[1,2], VDS=2 V, IDS= 15 mA.
OIP3,
P
1dB
(dBm)
08
24
6
25
°C
-40
°C
85
°C
25
20
15
10
5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-35143-TR1G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-BLKG | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-TR1G | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-TR2G | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF35176 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-18 GHz Low Noise Pseudomorphic HEMT |
| ATF35376 | 制造商:AVANTEK 功能描述:JFET Transistor, N-Channel |
| ATF35576 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 20MA I(DSS) | MICRO-XVAR |
| ATF36077 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-18 GHz Ultra Low Noise Pseudomorphic HEMT |
| ATF-36077 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-18 GHz Ultra Low Noise Pseudomorphic HEMT |
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