- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄42902 > ATF-35143-TR1 (AGILENT TECHNOLOGIES INC) X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET PDF資料下載
參數(shù)資料
| 型號(hào)： | ATF-35143-TR1 |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | PLASTIC, SC-70, 4 PIN |
| 文件頁(yè)數(shù)： | 14/19頁(yè) |
| 文件大?。?/td> | 170K |
| 代理商： | ATF-35143-TR1 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)當(dāng)前第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)
4
ATF-35143 Typical Performance Curves
Notes:
1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 2 V
15 mA bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on
production test board requirements. Circuit losses have been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device
is running closer to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency)
when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS
= 4 V and IDSQ = 5 mA, Id increases to 30 mA as a P1dB of +15 dBm is approached.
IDSQ (mA)
Figure 6. OIP3 and P1dB vs. Bias at
2 GHz.[1,2]
OIP3,
P
1dB
(dBm)
060
30
25
20
15
10
5
0
20
10
40
50
30
2 V
3 V
4 V
OIP3
P1dB
IDSQ (mA)
Figure 7. OIP3 and P1dB vs. Bias at
900 MHz.[1,2]
OIP3,
P
1dB
(dBm)
060
20
10
40
50
30
2 V
3 V
4 V
OIP3
P1dB
30
25
20
15
10
5
IDSQ (mA)
Figure 8. NF and Ga vs. Bias at 2 GHz.[1]
G
a
(dB)
060
20
10
40
50
30
2 V
3 V
4 V
Ga
NF
20
19
18
17
16
15
NF
(dB)
2.5
2
1.5
1
0.5
0
IDSQ (mA)
Figure 9. NF and Ga vs. Bias at
900 MHz.[1]
G
a
(dB)
060
20
10
40
50
30
2 V
3 V
4 V
Ga
NF
24
22
20
18
16
14
NF
(dB)
2.5
2
1.5
1
0.5
0
IDS (mA)
Figure 10. P1dB vs. Bias (Active Bias)
Tuned for NF @ 2 V, 15 mA at 2 GHz.[1]
P
1dB
(dBm)
080
25
20
15
10
5
0
-5
20
40
60
2 V
3 V
4 V
IDS (mA)
Figure 11. P1dB vs. Bias (Active Bias)
Tuned for NF @ 2 V, 15 mA at 900 MHz.[1]
P
1dB
(dBm)
080
20
40
60
2 V
3 V
4 V
20
15
10
5
0
-5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-35143-TR2G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-TR1G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-BLKG | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-TR1G | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-TR2G | L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-35143-TR1G | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-35143-TR2 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-35143-TR2G | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF35176 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-18 GHz Low Noise Pseudomorphic HEMT |
| ATF35376 | 制造商:AVANTEK 功能描述:JFET Transistor, N-Channel |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。