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參數(shù)資料
| 型號(hào)： | ATF-35143-BLK |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | PLASTIC, SOT-343, 4 PIN |
| 文件頁(yè)數(shù)： | 8/19頁(yè) |
| 文件大?。?/td> | 126K |
| 代理商： | ATF-35143-BLK |
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L=Lc
L=Lb
R=Rb
L=Lb
R=Rb
L
C
C=Ca
C
C=Cb
LOSSYL
L=Lb
R=Rb
L=La*.5
L=Ld
L
LOSSYL
GATE_IN
SOURCE
DRAIN_OUT
R
EQUATION La=0.1 nH
EQUATION Lb=0.1 nH
EQUATION Lc=0.8 nH
EQUATION Ld=0.6 nH
EQUATION Rb=0.1 OH
EQUATION Ca=0.15 pF
EQUATION Cb=0.15 pF
R=0.1 OH
LOSSYL
L=La
L=Lb
R=Rb
L
LOSSYL
L=Lb
R=Rb
LOSSYL
G
S
D
SOURCE
ATF-35143 SC-70 4 Lead, High Frequency Model
Optimized for 0.1 – 6.0 GHz
This model can be used as a
design tool. It has been tested on
MDS for various specifications.
However, for more precise and
accurate design, please refer to
the measured data in this data
sheet. For future improvements
Hewlett Packard reserves the
right to change these models
without prior notice.
NFETMESFET
G
MODEL=FET
W=400
m
XX
D
XX
S
XX
NFET=yes
PFET=
IDSMOD=3
VTO=–0.95
BETA= Beta
LAMBDA=0.09
ALPHA=4.0
B=0.8
TNOM=27
IDSTC=
VBI=.7
IDS model
DELTA=.2
GSCAP=3
CGS=cgs pF
GDCAP=3
GCD=Cgd pF
Gate model
RG=1
RD=Rd
RS=Rs
LG=Lg nH
LD=Ld nH
LS=Ls nH
CDS=Cds pF
CRF=.1
RC=Rc
Parasitics
GSFWD=1
GSREV=0
GDFWD=1
GDREV=0
VJR=1
IS=1 nA
IR=1 nA
IMAX=.1
XTI=
N=
EG=
Breakdown
FNC=01e+6
R=.17
P=.65
C=.2
Noise
Model scal factors (W=FET width in microns)
EQUATION Cds=0.01 *W/200
EQUATION Beta=0.06 *W/200
EQUATION Rd=200W
EQUATION Rs=.5 *200/W
EQUATION Cgs=0.2 *W/200
EQUATION Cgd=0.04 *W/200
EQUATION Lg=0.03 *200/W
EQUATION Ld=0.03 *200/W
EQUATION Ls=0.01 *200/W
EQUATION Rc=500 *200/W
* STATZ MESFET MODEL *
MODEL = FET
ATF-35143 Die Model
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-36163-BLKG | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-36163-TR2 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-36163-TR1 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-36163-TR2G | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-36163-TR1G | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-35143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-35143-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-35143-TR1G | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-35143-TR2 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-35143-TR2G | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
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