參數(shù)資料
型號(hào): ATF-34143-TR2
元件分類: 小信號(hào)晶體管
英文描述: X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝: PLASTIC, SOT-343, 4 PIN
文件頁(yè)數(shù): 14/14頁(yè)
文件大?。?/td> 97K
代理商: ATF-34143-TR2
9
ATF-34143 Typical Noise Parameters
VDS = 4 V, IDS = 40 mA
Freq.
Fmin
Γ
opt
Rn/50
Ga
GHz
dB
Mag.
Ang.
-
dB
0.5
0.10
0.87
13
0.16
22.8
0.9
0.13
0.82
27
0.14
19.4
1.0
0.14
0.80
31
0.13
18.9
1.5
0.17
0.73
49
0.11
17.4
1.8
0.20
0.70
60
0.10
16.9
2.0
0.22
0.66
67
0.09
16.4
2.5
0.28
0.60
85
0.07
15.6
3.0
0.34
0.54
104
0.05
14.8
4.0
0.45
142
0.03
13.3
5.0
0.57
0.40
180
0.03
12.0
6.0
0.69
0.38
-144
0.05
10.9
7.0
0.81
0.39
-111
0.11
9.9
8.0
0.94
0.43
-82
0.20
9.1
9.0
1.06
0.51
-57
0.32
8.5
10.0
1.19
0.62
-40
0.47
8.1
ATF-34143 Typical Scattering Parameters, V
DS = 4 V, IDS = 40 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
0.5
0.95
-40
21.56
11.973
151
0.03
0.030
68
0.33
-39
26.01
0.8
0.89
-65
21.02
11.252
135
0.04
0.042
56
0.27
-63
24.28
1.0
0.85
-82
20.19
10.217
123
0.05
0.051
48
0.26
-80
23.02
1.5
0.78
-109
18.49
8.405
104
0.06
0.064
36
0.24
-109
21.18
1.8
0.73
-131
16.93
7.024
87
0.07
0.074
27
0.22
-131
20.46
2.0
0.70
-150
15.57
6.002
73
0.08
0.081
19
0.21
-150
19.77
2.5
0.67
-167
14.36
5.223
61
0.09
0.087
12
0.20
-167
18.70
3.0
0.64
162
12.34
4.141
37
0.10
0.098
-1
0.19
165
17.75
4.0
0.63
135
10.70
3.428
16
0.11
0.108
-13
0.20
138
16.26
5.0
0.64
111
9.32
2.923
-6
0.12
0.117
-27
0.21
111
15.02
6.0
0.66
87
7.98
2.506
-26
0.12
0.124
-41
0.24
86
12.93
7.0
0.69
65
6.74
2.173
-46
0.13
0.130
-54
0.29
63
11.14
8.0
0.72
47
5.55
1.894
-65
0.13
0.134
-68
0.34
42
10.09
9.0
0.76
28
4.55
1.689
-85
0.14
0.141
-82
0.38
26
9.24
10.0
0.78
9
3.53
1.501
-104
0.15
0.145
-97
0.42
8
8.79
11.0
0.80
-11
2.39
1.317
-124
0.15
0.145
-113
0.47
-11
8.09
12.0
0.84
-29
1.02
1.125
-143
0.14
0.140
-128
0.53
-29
7.35
13.0
0.86
-44
-0.30
0.966
-160
0.13
0.133
-141
0.58
-43
6.76
14.0
0.87
-56
-1.38
0.853
-176
0.13
0.130
-152
0.62
-58
6.19
15.0
0.86
-72
-2.40
0.759
167
0.13
0.131
-165
0.65
-71
5.62
16.0
0.86
-88
-3.53
0.666
151
0.13
0.130
-180
0.68
-86
4.43
17.0
0.89
-102
-4.99
0.563
134
0.12
0.119
168
0.71
-103
3.60
18.0
0.89
-101.85
-4.99
0.563
134
0.12
0.119
168
0.71
-103
3.15
FREQUENCY (GHz)
Figure 25. MSG/MAG and |S21|
2 vs.
Frequency at 4 V, 40 mA.
MSG/MAG
and
S
21
(dB)
04
2
8
14
16
10
12
618
30
25
20
15
10
5
0
-5
MSG
MAG
S21
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values
are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the
end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated
through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the
carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of
that point.
相關(guān)PDF資料
PDF描述
ATF-34143-BLK X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-34143-TR1 X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-35143-BLKG X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-35143-BLK X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-35143-TR2 X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
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