參數(shù)資料
型號: ATF-34143-TR1G
元件分類: 小信號晶體管
英文描述: X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝: LEAD FREE, PLASTIC, SC-70, 4 PIN
文件頁數(shù): 14/15頁
文件大小: 258K
代理商: ATF-34143-TR1G
8
ATF-34143 Typical Noise Parameters
VDS = 3 V, IDS = 40 mA
Freq.
Fmin
Γopt
Rn/50
Ga
GHz
dB
Mag.
Ang.
-
dB
0.5
0.10
0.87
13
0.16
23.0
0.9
0.13
0.82
28
0.13
19.6
1.0
0.14
0.80
32
0.13
19.2
1.5
0.17
0.73
50
0.1
17.7
1.8
0.21
0.70
61
0.09
17.1
2.0
0.23
0.66
68
0.08
16.7
2.5
0.29
0.60
87
0.06
15.8
3.0
0.35
0.54
106
0.05
14.9
4.0
0.47
0.46
144
0.03
13.4
5.0
0.6
0.41
-178
0.03
12.1
6.0
0.72
0.39
-142
0.06
10.9
7.0
0.85
0.41
-109
0.12
9.9
8.0
0.97
0.45
-80
0.21
9.1
9.0
1.09
0.52
-56
0.34
8.4
10.0
1.22
0.61
-39
0.50
8.0
ATF-34143 Typical Scattering Parameters, VDS = 3 V, IDS = 40 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
0.5
0.96
-40
21.32
11.645
151
-30.46
0.030
68
0.29
-43
25.89
0.8
0.89
-64
20.79
10.950
135
-27.33
0.043
56
0.24
-70
24.06
1.0
0.85
-81
19.96
9.956
124
-25.68
0.052
49
0.24
-88
22.82
1.5
0.79
-109
18.29
8.209
104
-23.61
0.066
36
0.23
-118
20.95
1.8
0.76
-121
17.50
7.495
96
-22.97
0.071
32
0.23
-130
20.24
2.0
0.74
-131
16.75
6.876
88
-22.38
0.076
27
0.22
-141
19.57
2.5
0.70
-150
15.39
5.880
74
-21.51
0.084
19
0.22
-160
18.45
3.0
0.67
-167
14.19
5.120
61
-20.92
0.090
12
0.22
-176
17.55
4.0
0.64
162
12.18
4.063
38
-19.83
0.102
-1
0.21
157
16.00
5.0
0.64
135
10.54
3.365
16
-19.02
0.112
-14
0.22
131
14.78
6.0
0.65
111
9.15
2.867
-5
-18.34
0.121
-28
0.24
105
12.91
7.0
0.66
87
7.80
2.454
-26
-17.86
0.128
-42
0.28
81
11.03
8.0
0.69
65
6.55
2.125
-46
-17.46
0.134
-55
0.32
60
9.93
9.0
0.73
46
5.33
1.848
-65
-17.20
0.138
-69
0.37
40
9.07
10.0
0.76
28
4.33
1.647
-84
-16.83
0.144
-84
0.41
23
8.59
11.0
0.78
9
3.30
1.462
-104
-16.65
0.147
-99
0.45
5
7.84
12.0
0.80
-11
2.15
1.281
-123
-16.65
0.147
-114
0.50
-14
7.15
13.0
0.83
-30
0.79
1.095
-142
-17.08
0.140
-130
0.55
-31
6.50
14.0
0.86
-44
-0.53
0.941
-158
-17.52
0.133
-142
0.60
-45
5.96
15.0
0.87
-56
-1.61
0.831
-174
-17.72
0.130
-154
0.64
-59
5.39
16.0
0.86
-72
-2.60
0.741
169
-17.72
0.130
-166
0.66
-73
4.21
17.0
0.86
-88
-3.72
0.652
153
-17.79
0.129
179
0.69
-88
3.43
18.0
0.88
-102
-5.15
0.553
137
-18.64
0.117
166
0.72
-105
2.95
FREQUENCY (GHz)
Figure 24. MSG/MAG and |S21|2 vs.
Frequency at 3 V, 40 mA.
MSG/MAG
and
S
21
(dB)
0
4
2
8
14 16
10 12
6
18
30
25
20
15
10
5
0
-5
-10
MSG
MAG
S21
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based
on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin
is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the
gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connect-
ing source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via
holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
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