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| 型號(hào)： | ATF-34143-BLKG |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件頁數(shù)： | 2/15頁 |
| 文件大?。?/td> | 258K |
| 代理商： | ATF-34143-BLKG |
10
ATF-34143 Typical Noise Parameters
VDS = 4 V, IDS = 60 mA
Freq.
Fmin
Γopt
Rn/50
Ga
GHz
dB
Mag.
Ang.
-
dB
0.5
0.11
0.84
15
0.14
24.5
0.9
0.14
0.78
30
0.12
20.7
1.0
0.15
0.77
34
0.12
20.2
1.5
0.20
0.69
53
0.10
18.5
1.8
0.23
0.66
62
0.10
17.7
2.0
0.26
0.62
72
0.09
17.2
2.5
0.33
0.55
91
0.07
16.3
3.0
0.39
0.50
111
0.05
15.4
4.0
0.53
0.43
149
0.03
13.7
5.0
0.67
0.39
-173
0.04
12.3
6.0
0.81
0.39
-137
0.07
11.1
7.0
0.96
0.42
-104
0.14
10.0
8.0
1.10
0.47
-76
0.26
9.2
9.0
1.25
0.54
-53
0.41
8.6
10.0
1.39
0.62
-37
0.60
8.2
ATF-34143 Typical Scattering Parameters, VDS = 4 V, IDS = 60 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
0.5
0.95
-41
21.91
12.454
150
-31.06
0.028
68
0.29
-41
26.48
0.8
0.89
-65
21.33
11.654
134
-28.18
0.039
57
0.24
-67
24.75
1.0
0.85
-83
20.46
10.549
123
-26.56
0.047
49
0.23
-84
23.51
1.5
0.78
-111
18.74
8.646
103
-24.44
0.060
38
0.21
-114
21.59
1.8
0.75
-122
17.92
7.873
95
-23.74
0.065
33
0.21
-125
20.83
2.0
0.73
-133
17.16
7.207
87
-23.22
0.069
29
0.20
-136
20.19
2.5
0.69
-151
15.78
6.149
73
-22.38
0.076
22
0.19
-155
19.08
3.0
0.67
-168
14.56
5.345
60
-21.62
0.083
15
0.19
-171
18.09
4.0
0.64
161
12.53
4.232
37
-20.54
0.094
3
0.18
162
16.53
5.0
0.63
134
10.88
3.501
16
-19.58
0.105
-10
0.19
135
15.23
6.0
0.64
111
9.49
2.983
-5
-18.79
0.115
-24
0.21
109
12.89
7.0
0.66
86
8.15
2.557
-26
-18.27
0.122
-38
0.24
84
11.22
8.0
0.69
65
6.92
2.217
-46
-17.79
0.129
-51
0.28
62
10.21
9.0
0.73
46
5.72
1.932
-65
-17.46
0.134
-65
0.33
42
9.36
10.0
0.76
28
4.73
1.723
-84
-16.95
0.142
-79
0.38
25
8.94
11.0
0.78
9
3.70
1.531
-104
-16.71
0.146
-94
0.42
7
8.23
12.0
0.81
-11
2.57
1.344
-124
-16.71
0.146
-111
0.47
-12
7.56
13.0
0.84
-30
1.20
1.148
-143
-17.02
0.141
-126
0.52
-29
6.94
14.0
0.86
-44
-0.12
0.986
-159
-17.46
0.134
-139
0.58
-43
6.37
15.0
0.87
-56
-1.21
0.870
-175
-17.59
0.132
-150
0.62
-58
5.78
16.0
0.86
-72
-2.21
0.775
168
-17.59
0.132
-163
0.65
-71
4.60
17.0
0.86
-88
-3.35
0.680
151
-17.65
0.131
-178
0.68
-86
3.79
18.0
0.89
-101.99
-4.81
0.575
135
-18.42
0.120
169
0.71
-104
3.33
FREQUENCY (GHz)
Figure 26. MSG/MAG and |S21|2 vs.
Frequency at 4 V, 60 mA.
MSG/MAG
and
S
21
(dB)
0
4
2
8
14 16
10 12
6
18
30
25
20
15
10
5
0
-5
-10
MSG
MAG
S21
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based
on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin
is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the
gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connect-
ing source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via
holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-34143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-34143-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-34143-G | 制造商:Avago Technologies 功能描述:Transistor,RF,GaAs,17.5dB GA,ATF-34143 |
| ATF34143TR1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 5.5V V(BR)DSS | 90MA I(DSS) | SOT-343R |
| ATF-34143-TR1 | 功能描述:IC TRANS PHEMT 1.9GHZ SOT-343 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| ATF-34143-TR1G | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
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