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參數(shù)資料
| 型號(hào)： | ATF-34143-BLK |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | PLASTIC, SOT-343, 4 PIN |
| 文件頁(yè)數(shù)： | 10/14頁(yè) |
| 文件大?。?/td> | 97K |
| 代理商： | ATF-34143-BLK |
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5
ATF-34143 Typical Performance Curves, continued
Note:
1. P1dB measurements are performed with passive biasing. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device
is running closer to class B as power output approaches P1dB. This results in higher PAE (power added efficiency) when compared to
a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 4 V and
IDSQ = 10 mA, Id increases to 62 mA as a P1dB of +19 dBm is approached.
Figure 19. P1dB vs. IDS Active Bias
Tuned for min NF @ 4V, 60 mA at
900 MHz.
FREQUENCY (MHz)
Figure 15. P1dB, IP3 vs. Frequency and
Temperature at VDS = 4 V, IDS = 60 mA.[1]
P1dB,
OIP3
(dBm)
0
2000
4000
6000
8000
33
31
29
27
25
23
21
19
17
85
°C
25
°C
-40
°C
OIP3
P1dB
IDSQ (mA)
Figure 16. NF, Gain, OP1dB and OIP3
vs. IDS at 4 V and 3.9 GHz Tuned for
Noise Figure.[1]
GAIN
(dB),
OP1dB,
and
OIP3
(dBm)
NOISE
FIGURE
(dB)
040
20
80
100
120
60
140
Gain
OP1dB
OIP3
NF
35
30
25
20
15
10
5
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
IDSQ (mA)
Figure 17. NF, Gain, OP1dB and OIP3
vs. IDS at 4 V and 5.8 GHz Tuned for
Noise Figure.[1]
GAIN
(dB),
OP1dB,
and
OIP3
(dBm)
NOISE
FIGURE
(dB)
040
20
80
100
120
60
Gain
OP1dB
OIP3
NF
30
27
24
21
18
15
12
9
6
3
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
FREQUENCY (GHz)
Figure 14. Fmin and Ga vs. Frequency
and Temperature at VDS = 4 V, IDS = 60 mA.
G
a
(dB)
0
2000
4000
6000
8000
25
20
15
10
NF
(dB)
1.5
1.0
0.5
0
85
°C
25
°C
-40
°C
IDS (mA)
Figure 18. P1dB vs. IDS Active Bias
Tuned for NF @ 4V, 60 mA at 2 GHz.
P
1d
B
(dBm)
0
100
50
150
25
20
15
10
5
0
-5
3 V
4 V
IDS (mA)
P
1d
B
(dBm)
0
100
50
150
25
20
15
10
5
0
-5
3 V
4 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-34143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-BLKG | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-34143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-34143-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-34143-G | 制造商:Avago Technologies 功能描述:Transistor,RF,GaAs,17.5dB GA,ATF-34143 |
| ATF34143TR1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 5.5V V(BR)DSS | 90MA I(DSS) | SOT-343R |
| ATF-34143-TR1 | 功能描述:IC TRANS PHEMT 1.9GHZ SOT-343 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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