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參數(shù)資料
| 型號： | ATF-26884-TR1 |
| 英文描述： | 2-16 GHz General Purpose Gallium Arsenide FET |
| 中文描述： | 2-16千兆赫通用砷化鎵場效應(yīng)管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 44K |
| 代理商： | ATF-26884-TR1 |
5-71
2–16 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-26884
84 Plastic Package
Description
The ATF-26884 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
Symbol
G
SS
NF
O
G
A
P
1 dB
Parameters and Test Conditions
Tuned Small Signal Gain: V
DS
= 5 V, I
DS
= 30 mA
Optimum Noise Figure: V
DS
= 3 V, I
DS
= 10 mA
Gain @ NF
O
: V
DS
= 3 V, I
DS
= 10 mA
Power Output @ 1 dB Gain Compression:
V
DS
= 5 V, I
DS
= 30 mA
Transconductance: V
DS
= 3 V, V
GS
= 0 V
Saturated Drain Current: V
DS
= 3 V, V
GS
= 0 V
Pinch-off Voltage: V
DS
= 3 V, I
DS
= 1 mA
Units Min.
dB
dB
dB
Typ. Max.
9.0
2.2
6.0
18.0
Electrical Specifications, T
A
= 25
°
C
f = 12.0 GHz
f = 12.0 GHz
f = 12.0 GHz
f = 12.0 GHz dBm
7.0
15.0
g
m
I
DSS
V
P
mmho
mA
V
15
30
-3.5
35
50
-1.5
90
-0.5
Note:
1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
Features
High Output Power:
18.0dBm Typical P
1 dB
at 12GHz
High Gain:
9.0 dB Typical G
SS
at 12GHz
Low Cost Plastic Package
Tape-and-Reel Packaging
Option Available
[1]
housed in a cost effective
microstrip package. This device is
designed for use in oscillator
applications and general purpose
amplifier applications in the
2-16GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
5965-8703E
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF26884 | 2-16 GHz General Purpose Gallium Arsenide FET |
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| ATF-331M4-TR1 | Agilent ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package |
| ATF-331M4-TR2 | Agilent ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package |
| ATF331M4 | Agilent ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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| ATF33143 | 制造商:AVAG 功能描述: 制造商:Avago Technologies 功能描述: |
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| ATF-33143-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-33143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
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