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| 型號(hào)： | ATF-25735 |
| 英文描述： | 0.5-10 GHz General Purpose Gallium Arsenide FET |
| 中文描述： | 0.5-10吉赫通用砷化鎵場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 46K |
| 代理商： | ATF-25735 |
5-63
0.5–10 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-25735
35 micro-X Package
Description
The ATF-25735 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a cost effective
Features
High Output Power:
19.0Bm Typical P
1 dB
at 4GHz
High Gain:
12.5dB Typical G
1 dB
at 4 GHz
Low Noise Figure:
1.2 dB Typical at 4 GHz
Cost Effective Ceramic
Microstrip Package
Electrical Specifications, T
A
= 25
°
C
Symbol
NF
O
Optimum Noise Figure: V
DS
= 3 V, I
DS
= 20 mA
Parameters and Test Conditions
Units Min.
dB
Typ. Max.
1.0
1.2
1.4
15.0
13.0
10.5
19.0
f = 2. 0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f =.6.0 GHz
f = 4.0 GHz
1.5
G
A
Gain @ NF
O
: V
DS
= 3 V, I
DS
= 20 mA
dB
11.5
P
1 dB
Power Output @ 1 dB Gain Compression:
V
DS
=5 V, I
DS
= 50 mA
1 dB Compressed Gain: V
DS
= 5 V, I
DS
=50 mA
Transconductance: V
DS
=3 V, V
GS
= 0 V
Saturated Drain Current: V
DS
=3 V, V
GS
= 0 V
Pinch-off Voltage: V
DS
= 3 V, I
DS
= 1 mA
dBm
G
1 dB
g
m
I
DSS
V
P
f = 4.0 GHz
dB
12.5
80
100
-2.0
mmho
mA
V
50
50
-3.0
150
-0.8
microstrip package. This device is
designed for use in general
purpose amplifier and oscillator
applications in the 0.5-10 GHz
frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconnects
between drain fingers. Total gate
periphery is 500 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
5965-8710E
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| ATF26350 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 30MA I(DSS) | MICRO-XVAR |
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