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參數(shù)資料
| 型號(hào)： | ATF-13736 |
| 英文描述： | 2-16 GHz Low Noise Gallium Arsenide FET(2-16 GHz 低噪聲砷化鎵 FET) |
| 中文描述： | 2-16 GHz的低噪聲砷化鎵場效應(yīng)管（2-16 GHz的低噪聲砷化鎵場效應(yīng)管） |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 75K |
| 代理商： | ATF-13736 |
3
Typical Scattering Parameters,
Common Emitter, Z
O
= 50
, T
A
= 25
°
C, V
DS
= 2.5 V, I
DS
=20 mA
Freq.
S
11
S
21
GHz
Mag.
Ang.
dB
Mag.
2.0
.94
-46
11.0
3.56
3.0
.86
-70
10.2
3.23
4.0
.84
-90
9.8
3.08
5.0
.77
-110
9.6
3.02
6.0
.68
-135
9.9
3.14
7.0
.59
-170
9.9
3.13
8.0
.54
149
9.5
2.99
9.0
.56
112
8.8
2.75
10.0
.58
86
8.1
2.53
11.0
.60
63
7.6
2.41
12.0
.64
39
7.0
2.24
13.0
.68
20
6.4
2.08
14.0
.70
9
6.0
1.99
15.0
.72
-1
5.2
1.83
16.0
.74
-17
4.6
1.70
S
12
Mag.
.048
.055
.070
.090
.109
.126
.132
.143
.152
.149
.140
.132
.126
.123
.120
S
22
Ang.
128
109
91
69
51
24
-1
-22
-43
-66
-90
-106
-130
-145
-177
dB
-26.4
-25.2
-23.1
-20.9
-19.3
-18.0
-17.6
-16.9
-16.4
-16.5
-17.1
-17.6
-18.0
-18.2
-18.4
Ang.
55
40
31
18
7
-12
-27
-43
-58
-73
-81
-90
-97
-111
-129
Mag.
.59
.57
.56
.52
.47
.39
.30
.19
.11
.09
.15
.19
.19
.15
.11
Ang.
-36
-47
-55
-63
-75
-92
-112
-121
-140
92
47
21
-3
-26
-34
Typical Scattering Parameters,
Common Emitter, Z
O
= 50
, T
A
= 25
°
C, V
DS
= 4 V, I
DS
=40 mA
Freq.
S
11
S
21
GHz
Mag.
Ang.
dB
Mag.
2.0
.88
-44
13.5
4.73
3.0
.76
-68
13.0
4.47
4.0
.68
-90
12.4
4.19
5.0
.56
-113
12.0
4.00
6.0
.42
-145
11.8
3.90
7.0
.37
161
11.5
3.74
8.0
.47
116
10.5
3.36
9.0
.57
90
9.4
2.96
10.0
.63
70
8.9
2.77
11.0
.69
51
7.9
2.47
12.0
.77
33
7.1
2.26
13.0
.82
21
6.0
2.00
14.0
.85
13
5.4
1.86
15.0
.83
1
4.8
1.73
16.0
.81
-17
4.4
1.65
A model for this device is available in the DEVICE MODELS section.
S
12
Mag.
.048
.057
.075
.089
.102
.117
.128
.138
.135
.131
.126
.118
.110
.104
.102
S
22
Ang.
130
107
86
66
44
20
-3
-23
-41
-63
-82
-101
-117
-134
-154
dB
-26.4
-24.9
-22.5
-21.0
-19.8
-18.6
-17.9
-17.2
-17.4
-17.7
-18.0
-18.6
-19.2
-19.7
-19.8
Ang.
64
52
39
32
21
9
-5
-19
-28
-39
-52
-65
-75
-83
-103
Mag.
.67
.61
.57
.52
.44
.31
.17
.05
.06
.17
.26
.35
.39
.41
.42
Ang.
-28
-39
-46
-52
-61
-75
-95
-143
128
100
75
62
54
49
41
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-13786-STR | Surface Mount Gallium Arsenide FET for Oscillators |
| ATF13786 | Surface Mount Gallium Arsenide FET for Oscillators |
| ATF-13786 | Surface Mount Gallium Arsenide FET for Oscillators |
| ATF-13786-TR1 | Surface Mount Gallium Arsenide FET for Oscillators |
| ATF13786 | Surface Mount Gallium Arsenide FET for Oscillators |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-13736-STR | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-16 GHz Low Noise Gallium Arsenide FET |
| ATF-13736-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-16 GHz Low Noise Gallium Arsenide FET |
| ATF13786 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Surface Mount Gallium Arsenide FET for Oscillators |
| ATF-13786 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Surface Mount Gallium Arsenide FET for Oscillators |
| ATF-13786-STR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Surface Mount Gallium Arsenide FET for Oscillators |
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