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參數(shù)資料
| 型號(hào)： | ATF-13336 |
| 英文描述： | 2-16 GHz Low Noise Gallium Arsenide FET(2-16 GHz 低噪聲砷化鎵 FET) |
| 中文描述： | 2-16 GHz的低噪聲砷化鎵場(chǎng)效應(yīng)管（2-16 GHz的低噪聲砷化鎵場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 39K |
| 代理商： | ATF-13336 |
2
ATF-13336 Typical Performance, T
A
= 25
°
C
ATF-13336 Absolute Maximum Ratings
Absolute
Maximum
[1]
+5
-4
-6
I
DSS
225
175
-65 to +175
Symbol
V
DS
V
GS
V
GD
I
DS
P
T
T
CH
T
STG
Parameter
Units
V
V
V
mA
mW
°
C
°
C
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation
[2,3]
Channel Temperature
Storage Temperature
Thermal Resistance:
Liquid Crystal Measurement:
θ
jc
= 400
°
C/W; T
CH
= 150
°
C
1
μ
m Spot Size
[5]
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE TEMPERATURE
= 25
°
C.
3. Derate at 2.5mW/
°
C for
T
CASE
> 85
°
C.
4. Storage above +150
°
C may tarnish
the leads of this package difficult to
solder into a circuit. After a device
has been soldered into a circuit, it
may be safely stored up to 175
°
C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of
θ
jc
than do alternate methods. See
MEASUREMENTS section for
more information.
Part Number Ordering Information
Part Number
ATF-13336-TR1
ATF-13336-STR
Devices Per Reel
1000
10
Reel Size
7"
strip
FREQUENCY (GHz)
N
O
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
DS
= 2.5 V, I
DS
= 20 mA.
FREQUENCY (GHz)
G
2.0
1.5
1.0
0.5
0
16
14
12
10
8
6
G
A
6.0
10.0
8.0
12.0 14.0 16.0
G
A
NF
O
|S
21
|
2
MSG
MAG
2.0
4.0
6.0
8.0
10.0 12.0 16.0
25
20
15
10
5
0
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
V
DS
= 2.5 V, I
DS
= 20 mA, T
A
= 25
°
C.
I
DS
(mA)
Figure 2. Optimum Noise Figure and
Associated Gain vs. I
.
V
DS
= 2.5 V, f = 12.0 GHz.
N
O
0
20
10
40
50
30
60
14
12
10
8
G
A
2.5
2.0
1.5
1.0
G
A
NF
O
ATF-13336 Noise Parameters:
V
DS
= 2.5 V, I
DS
= 20 mA
Freq.
GHz
NF
O
dB
Γ
opt
Mag
.63
.47
.40
.52
.57
Ang
93
138
-153
-45
-2
R
N
/50
4.0
6.0
8.0
12.0
14.0
0.8
1.1
1.2
1.4
1.6
.27
.10
.20
.88
1.3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-13736 | 2-16 GHz Low Noise Gallium Arsenide FET(2-16 GHz 低噪聲砷化鎵 FET) |
| ATF-13786-STR | Surface Mount Gallium Arsenide FET for Oscillators |
| ATF13786 | Surface Mount Gallium Arsenide FET for Oscillators |
| ATF-13786 | Surface Mount Gallium Arsenide FET for Oscillators |
| ATF-13786-TR1 | Surface Mount Gallium Arsenide FET for Oscillators |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-13336-STR | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-16 GHz Low Noise Gallium Arsenide FET |
| ATF-13336-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-16 GHz Low Noise Gallium Arsenide FET |
| ATF-13736 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-16 GHz Low Noise Gallium Arsenide FET |
| ATF-13736-STR | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-16 GHz Low Noise Gallium Arsenide FET |
| ATF-13736-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-16 GHz Low Noise Gallium Arsenide FET |
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