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參數(shù)資料
| 型號： | ATF-10736-STR |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封裝： | CERAMIC, 36, MICRO-X-4 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 49K |
| 代理商： | ATF-10736-STR |
5-29
0.5 – 12 GHz General Purpose
Gallium Arsenide FET
Technical Data
Features
High Associated Gain:
13.0 dB Typical at 4 GHz
Low Bias:
VDS = 2 V, IDS= 25 mA
High Output Power:
20.0 dBm typical P 1dB at 4 GHz
Low Noise Figure:
1.2 dB Typical at 4 GHz
Cost Effective Ceramic
Microstrip Package
Tape-and-Reel Packaging
Option Available [1]
ATF-10736
36 micro-X Package
Description
The ATF-10736 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a cost effective
microstrip package. Its noise
figure makes this device appropri-
ate for use in the gain stages of
low noise amplifiers operating in
the 0.5-12 GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconcnects
between drain fingers. Total gate
periphery is 500 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
NFO
Optimum Noise Figure: VDS = 2 V, IDS = 25 mA
f = 2.0 GHz
dB
0.9
f = 4.0 GHz
dB
1.2
1.4
f = 6.0 GHz
dB
1.4
GA
Gain @ NFO; VDS = 2 V, IDS = 25 mA
f = 2.0 GHz
dB
16.5
f = 4.0 GHz
dB
12.0
13.0
f = 6.0 GHz
dB
10.5
P1 dB
Power Output @ 1 dB Gain Compression
f = 4.0 GHz
dBm
20.0
VDS = 4 V, IDS = 70 mA
G1 dB
1 dB Compressed Gain: VDS = 4 V, IDS = 70 mA
f = 4.0 GHz
dB
12.0
gm
Transconductance: VDS = 2 V, VGS = 0 V
mmho
70
140
IDSS
Saturated Drain Current: VDS = 2 V, VGS = 0 V
mA
70
130
180
VP
Pinchoff Voltage: VDS = 2 V, IDS = 1 mA
V
-4.0
-1.3
-0.5
Note:
1. Refer to PACKAGING section, “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
5965-8698E
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-10736-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:0.5?12 GHz General Purpose Gallium Arsenide FET |
| ATF-10736-TRI | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:0.5?12 GHz General Purpose Gallium Arsenide FET |
| ATF-10XXX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Noise Gallium Arsenide FET -- Reliability Data (20K in pdf) |
| ATF13036 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 40MA I(DSS) | MICRO-X |
| ATF13100 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 40MA I(DSS) | CHIP |
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