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參數資料
| 型號： | ATF-10100 |
| 英文描述： | 0.5-12 GHz Low Noise Gallium Arsenide FET |
| 中文描述： | 0.5-12 GHz的低噪聲砷化鎵場效應管 |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 51K |
| 代理商： | ATF-10100 |
5-19
0.5–12 GHz Low Noise
Gallium Arsenide FET
Technical Data
Features
Low Noise Figure:
0.5 dB Typical at 4 GHz
Low Bias:
V
DS
= 2 V, I
DS
=25 mA
High Associated Gain:
14.0 dB Typical at 4 GHz
High Output Power:
21.0 dBm Typical P
1 dB
at 4 GHz
Description
The ATF-10100 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
ATF-10100
Chip Outline
Electrical Specifications, T
A
= 25
°
C
Symbol
NF
O
Optimum Noise Figure: V
CE
= 2 V, I
DS
= 25 mA
Parameters and Test Conditions
[1]
Units Min.
dB
dB
dB
dB
dB
dB
dBm
Typ. Max.
0.4
0.55
0.8
17.0
14.0
12.0
21.0
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 4.0 GHz
0.7
G
A
Gain @ NF
O
; V
DS
= 2 V, I
DS
= 25 mA
12.0
P
1 dB
Power Output @ 1 dB Gain Compression
V
DS
= 4 V, I
DS
= 70 mA
1 dB Compressed Gain: V
DS
= 4 V, I
DS
= 70 mA
Transconductance: V
DS
= 2 V, V
GS
= 0 V
Saturated Drain Current: V
DS
= 2 V, V
GS
= 0 V
Pinchoff Voltage: V
DS
= 2 V, I
DS
= 1 mA
G
1 dB
g
m
I
DSS
V
P
f = 4.0 GHz
dB
15.0
140
130
-1.3
mmho
mA
V
80
70
-3.0
180
-0.8
Note:
1.
RF performance is determined by packaging and testing 10 devices per wafer
.
D
S
S
G
G
chip. Its premium noise figure
makes this device appropriate for
use in the first stage of low noise
amplifiers operating in the
0.5-12GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
interconnects between drain
fingers. Total gate periphery is
500microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
5965-8702E
相關PDF資料 |
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|---|---|
| ATF-10100-GP3 | 0.5-12 GHz Low Noise Gallium Arsenide FET |
| ATF-21170 | 0.5-6 GHz Low Noise Gallium Arsenide FET |
| ATF-21186 | 0.5-6 GHz General Purpose Gallium Arsenide FET |
| ATF-21186-STR | 0.5-6 GHz General Purpose Gallium Arsenide FET |
| ATF-21186-TR1 | 0.5-6 GHz General Purpose Gallium Arsenide FET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| ATF-10100-GP3 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:0.5-12 GHz Low Noise Gallium Arsenide FET |
| ATF10135 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | SOT-173VAR |
| ATF10136 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:0.5-12 GHz Low Noise Gallium Arsenide FET |
| ATF-10136 | 制造商:Agilent Technologies 功能描述: 制造商:AGILNT 功能描述: |
| ATF-10136-STR | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:0.5-12 GHz Low Noise Gallium Arsenide FET |
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