參數(shù)資料
型號: ATC93C46C-10SI-2.5
英文描述: Microwire Serial EEPROM
中文描述: 微型導(dǎo)線串行EEPROM
文件頁數(shù): 5/12頁
文件大小: 206K
代理商: ATC93C46C-10SI-2.5
AT93C46C
Functional Description
The AT93C46C is accessed via a simple and versatile
three-wire serial communication interface. Device opera-
tion is controlled by seven instructions issued by the host
processor.
A valid instruction starts with a rising edge
of CS
and consists of a Start Bit (logic
1
) followed by the
appropriate Op Code and the desired memory Address
location.
READ (READ):
The Read (READ) instruction contains
the Address code for the memory location to be read. After
the instruction and address are decoded, data from the
selected memory location is available at the serial output
pin DO. Output data changes are synchronized with the ris-
ing edges of serial clock SK. It should be noted that a
dummy bit (logic
0
) precedes the 16-bit data output string.
ERASE/WRITE (EWEN):
To assure data integrity, the
part automatically goes into the Erase/Write Disable
(EWDS) state when power is first applied. An Erase/Write
Enable (EWEN) instruction must be executed first before
any programming instructions can be carried out. Please
note that once in the Erase/Write Enable state, program-
ming remains enabled until an Erase/Write Disable
(EWDS) instruction is executed or V
CC
power is removed
from the part.
ERASE (ERASE):
The Erase (ERASE) instruction pro-
grams all bits in the specified memory location to the logical
1
state. The self-timed erase cycle starts once the
ERASE instruction and address are decoded. The DO pin
outputs the READY/BUSY status of the part if CS is
brought high after being kept low for a minimum of 250 ns
(t
CS
). A logic
1
at pin DO indicates that the selected mem-
ory location has been erased, and the part is ready for
another instruction.
WRITE (WRITE):
the 16 bits of data to be written into the specified memory
location. The self-timed programming cycle t
WP
starts after
the last bit of data is received at serial data input pin DI.
The DO pin outputs the READY/BUSY status of the part if
CS is brought high after being kept low for a minimum of
250 ns (t
CS
). A logic
0
at DO indicates that programming
is still in progress. A logic
1
indicates that the memory
location at the specified address has been written with the
data pattern contained in the instruction and the part is
ready for further instructions.
A Ready/Busy Status can-
not be obtained if the CS is brought high after the end
of the self-timed programming cycle, t
WP
.
ERASE ALL (ERAL):
The Erase All (ERAL) instruction
programs every bit in the memory array to the logic
1
state and is primarily used for testing purposes. The DO pin
outputs the READY/BUSY status of the part if CS is
brought high after being kept low for a minimum of 250 ns
(t
CS
). The ERAL instruction is valid only at V
CC
= 5.0V
±
10%.
WRITE ALL (WRAL):
The Write All (WRAL) instruction
programs all memory locations with the data patterns spec-
ified in the instruction. The DO pin outputs the
READY/BUSY status of the part if CS is brought high after
being kept low for a minimum of 250 ns (t
CS
). The WRAL
instruction is valid only at V
CC
= 5.0V
±
=
10%.
ERASE/WRITE DISABLE (EWDS):
accidental data disturb, the Erase/Write Disable (EWDS)
instruction disables all programming modes and should be
executed after all programming operations. The operation
of the READ instruction is independent of both the EWEN
and EWDS instructions and can be executed at any time.
The Write (WRITE) instruction contains
To protect against
Instruction Set for the AT93C46C
Instruction
SB
Op Code
Address
Comments
x 16
READ
1
10
A
5
- A
0
Reads data stored in memory, at specified address.
EWEN
1
00
11XXXX
Write enable must precede all programming modes.
ERASE
1
11
A
5
- A
0
Erase memory location A
n
- A
0
.
WRITE
1
01
A
5
- A
0
Writes memory location A
n
- A
0
.
ERAL
1
00
10XXXX
Erases all memory locations. Valid only at V
CC
= 4.5V to 5.5V.
WRAL
1
00
01XXXX
Writes all memory locations. Valid only at V
CC
= 4.5V to 5.5V.
EWDS
1
00
00XXXX
Disables all programming instructions.
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